SSM6J402TU Todos los transistores

 

SSM6J402TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM6J402TU
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.117 Ohm
   Paquete / Cubierta: UF6
 

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SSM6J402TU Datasheet (PDF)

 ..1. Size:197K  toshiba
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SSM6J402TU

SSM6J402TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J402TU DC/DC Converter Application High-Speed Switching Applications unit: mm2.10.1 4.0 V drive 1.70.1 Low ON-resistance : RDS(ON) = 225m max (@VGS = -4 V) : RDS(ON) = 117m max (@VGS = -10 V) 1 62 5Absolute Maximum Ratings (Ta = 25C) 3 4Characteristic Symbol Rating

 7.1. Size:221K  toshiba
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SSM6J402TU

SSM6J409TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM6J409TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 72.3m (max) (@VGS = -1.5 V) Ron = 46.2m (max) (@VGS = -1.8 V) Ron = 30.2m (max) (@VGS = -2.5 V) Ron = 22.1m (max) (@VGS = -4.5 V) Absolut

 7.2. Size:197K  toshiba
 ssm6j401tu.pdf pdf_icon

SSM6J402TU

SSM6J401TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J401TU DC/DC Converter Application High-Speed Switching Applications unit: mm2.10.1 4.0V drive 1.70.1 Low ON-resistance : RDS(ON) = 145m (max) (@VGS = -4 V) : RDS(ON) = 73m (max) (@VGS = -10 V) 1 62 5Absolute Maximum Ratings (Ta = 25C) 3 4Characteristic Symbol Rating

 8.1. Size:217K  toshiba
 ssm6j410tu.pdf pdf_icon

SSM6J402TU

SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J410TU Power Management Switch Applications Unit: mm High-Speed Switching Applications 4-V drive Low ON-resistance RDS(ON) = 393m (max) (@VGS = 4 V) RDS(ON) = 216m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-Sou

MOSTRAR MÁS

Otros transistores... SSM6J212FE , SSM6J213FE , SSM6J214FE , SSM6J21TU , SSM6J23FE , SSM6J25FE , SSM6J26FE , SSM6J401TU , 7N60 , SSM6J409TU , SSM6J410TU , SSM6J412TU , SSM6J501NU , SSM6J502NU , SSM6J503NU , SSM6J50TU , SSM6J51TU .

 

 
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