SSM6J503NU Todos los transistores

 

SSM6J503NU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM6J503NU
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 118 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0324 Ohm
   Paquete / Cubierta: UDFN6B
 

 Búsqueda de reemplazo de SSM6J503NU MOSFET

   - Selección ⓘ de transistores por parámetros

 

SSM6J503NU Datasheet (PDF)

 ..1. Size:237K  toshiba
 ssm6j503nu.pdf pdf_icon

SSM6J503NU

SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J503NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V) RDS(ON) = 32.4 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

 7.1. Size:240K  toshiba
 ssm6j507nu.pdf pdf_icon

SSM6J503NU

SSM6J507NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J507NUSSM6J507NUSSM6J507NUSSM6J507NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5

 7.2. Size:236K  toshiba
 ssm6j502nu.pdf pdf_icon

SSM6J503NU

SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J502NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V) RDS(ON) = 23.1 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

 7.3. Size:241K  toshiba
 ssm6j50tu.pdf pdf_icon

SSM6J503NU

SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J50TU High Current Switching Applications Unit: mm Compact package suitable for high-density mounting Low on-resistance: Ron = 205m (max) (@VGS = -2.0 V) Ron = 100m (max) (@VGS = -2.5 V) Ron = 64m (max) (@VGS = -4.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Ra

MOSTRAR MÁS

Otros transistores... SSM6J26FE , SSM6J401TU , SSM6J402TU , SSM6J409TU , SSM6J410TU , SSM6J412TU , SSM6J501NU , SSM6J502NU , AON6380 , SSM6J50TU , SSM6J51TU , SSM6J53FE , SSM6K06FU , SSM6K07FU , SSM6K08FU , SSM6K18TU , SSM6K202FE .

History: BSO200P03S | TT8K11 | NP82N055NHE

 

 
Back to Top

 


 
.