SSM6J53FE Todos los transistores

 ..1. Size:299K  toshiba
 ssm6j53fe.pdf

SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE High-Speed Switching Applications Unit mm Power Management Switch Applications 1.6 0.05 1.2 0.05 1.5 V drive Suitable for high-density mounting due to compact package 1 6 Low on-resistance Ron = 136 m (max) (@VGS = -2.5 V) Ron = 204 m (max) (@VGS = -1.8 V) 5 2

 8.1. Size:240K  toshiba
 ssm6j507nu.pdf

SSM6J507NU MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J507NU SSM6J507NU SSM6J507NU SSM6J507NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 4 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5

 8.2. Size:277K  toshiba
 ssm6j51tu.pdf

SSM6J51TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) SSM6J51TU High Current Switching Applications Unit mm Suitable for high-density mounting due to compact package Low on-resistance Ron = 54 m (max) (@VGS = -2.5 V) 85 m (max) (@VGS = -1.8 V) 150m (max) (@VGS = -1.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

 8.3. Size:370K  toshiba
 ssm6j512nu.pdf

SSM6J512NU MOSFETs Silicon P-Channel MOS SSM6J512NU SSM6J512NU SSM6J512NU SSM6J512NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 24.0 m (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 m (typ.) (@VGS = -2.5 V

 8.4. Size:295K  toshiba
 ssm6j511nu.pdf

SSM6J511NU MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J511NU SSM6J511NU SSM6J511NU SSM6J511NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 13.5 m (max) (@VGS = -2.5 V) RDS(ON) = 10 m (max) (@VGS =

 8.5. Size:237K  toshiba
 ssm6j503nu.pdf

SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J503NU Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V) RDS(ON) = 32.4 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C

 8.6. Size:236K  toshiba
 ssm6j502nu.pdf

SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS ) SSM6J502NU Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V) RDS(ON) = 23.1 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C

 8.7. Size:241K  toshiba
 ssm6j50tu.pdf

SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) SSM6J50TU High Current Switching Applications Unit mm Compact package suitable for high-density mounting Low on-resistance Ron = 205m (max) (@VGS = -2.0 V) Ron = 100m (max) (@VGS = -2.5 V) Ron = 64m (max) (@VGS = -4.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Ra

 8.8. Size:205K  toshiba
 ssm6j501nu.pdf

SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS ) SSM6J501NU Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON) = 43.0 m (max) (@VGS = -1.5 V) RDS(ON) = 26.5 m (max) (@VGS = -1.8 V) RDS(ON) = 19.0 m (max) (@VGS = -2.5 V) RDS(ON) = 15.3 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C

 8.9. Size:235K  toshiba
 ssm6j505nu.pdf

SSM6J505NU MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J505NU SSM6J505NU SSM6J505NU SSM6J505NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 61 m (max) (@VGS = -1.2 V) RDS(ON) = 30 m (max) (@VGS = -