SSM6K24FE Todos los transistores

 

SSM6K24FE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM6K24FE
   Código: NF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 0.5 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 0.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.1 V
   Conductancia de drenaje-sustrato (Cd): 41 pF
   Resistencia entre drenaje y fuente RDS(on): 0.145 Ohm
   Paquete / Cubierta: SOT563 ES6

 Búsqueda de reemplazo de MOSFET SSM6K24FE

 

SSM6K24FE Datasheet (PDF)

 ..1. Size:153K  toshiba
ssm6k24fe.pdf

SSM6K24FE
SSM6K24FE

SSM6K24FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K24FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 145m (max) (@VGS = 4.5 V) 1.20.05Ron = 180m (max) (@VGS = 2.5 V) 1 6Maximum Ratings (Ta = 25C) 52Characteristics Symbol Rating Unit4

 8.1. Size:202K  toshiba
ssm6k210fe.pdf

SSM6K24FE
SSM6K24FE

SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 4.0-V drive Low ON-resistance: Ron = 371 m (max) (@VGS = 4.0 V), Ron = 228 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS

 8.2. Size:198K  toshiba
ssm6k203fe.pdf

SSM6K24FE
SSM6K24FE

SSM6K203FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K203FE High-Speed Switching Applications Unit: mm Power Management Switch Applications 1.5 V drive Low ON-resistance: Ron = 153 m (max) (@VGS = 1.5V) Ron = 106 m (max) (@VGS = 1.8V) Ron = 76 m (max) (@VGS = 2.5V) Ron = 61 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta

 8.3. Size:197K  toshiba
ssm6k204fe.pdf

SSM6K24FE
SSM6K24FE

SSM6K204FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K204FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 307 m (max) (@VGS = 1.5V) Ron = 214 m (max) (@VGS = 1.8V) Ron = 164 m (max) (@VGS = 2.5V) Ron = 126 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta

 8.4. Size:278K  toshiba
ssm6k22fe.pdf

SSM6K24FE
SSM6K24FE

SSM6K22FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6K22FE High Current Switching Applications Unit: mmDC-DC Converter Suitable for high-density mounting due to compact package Low on resistance: Ron = 170 m (max) (@VGS = 4.0 V) Ron = 230 m (max) (@VGS = 2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain

 8.5. Size:213K  toshiba
ssm6k217fe.pdf

SSM6K24FE
SSM6K24FE

SSM6K217FEMOSFETs Silicon N-Channel MOSSSM6K217FESSM6K217FESSM6K217FESSM6K217FE1. Applications1. Applications1. Applications1. Applications Power Management Switches DC-DC Converters2. Features2. Features2. Features2. Features(1) 1.8-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 155 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) =

 8.6. Size:189K  toshiba
ssm6k208fe.pdf

SSM6K24FE
SSM6K24FE

SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive Low ON-resistance: Ron = 296m (max) (@VGS = 1.8 V) Ron = 177m (max) (@VGS = 2.5 V) Ron = 133m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rati

 8.7. Size:244K  toshiba
ssm6k202fe.pdf

SSM6K24FE
SSM6K24FE

SSM6K202FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K202FE Unit: mm High-Speed Switching Applications Power Management Switch Applications 1.8 V drive Low ON-resistance: Ron = 145 m (max) (@VGS = 1.8V) Ron = 101 m (max) (@VGS = 2.5V) Ron = 85 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rat

 8.8. Size:197K  toshiba
ssm6k211fe.pdf

SSM6K24FE
SSM6K24FE

SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS) SSM6K211FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: Ron = 118 m (max) (@VGS = 1.5 V) Ron = 82 m (max) (@VGS = 1.8 V) Ron = 59 m (max) (@VGS = 2.5 V) Ron = 47 m (max) (@VGS = 4.5 V) Absolute Maximum

 8.9. Size:154K  toshiba
ssm6k25fe.pdf

SSM6K24FE
SSM6K24FE

SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K25FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 395m (max) (@VGS = 1.8 V) 1.20.05Ron = 190m (max) (@VGS = 2.5 V) Ron = 145m (max) (@VGS = 4.0 V) 1 65Maximum Ratings (Ta = 25C) 24

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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