SSM6K25FE Todos los transistores

 ..1. Size:154K  toshiba
 ssm6k25fe.pdf

SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K25FE High Speed Switching Applications Unit mm 1.6 0.05 Optimum for high-density mounting in small packages Low on-resistance Ron = 395m (max) (@VGS = 1.8 V) 1.2 0.05 Ron = 190m (max) (@VGS = 2.5 V) Ron = 145m (max) (@VGS = 4.0 V) 1 6 5 Maximum Ratings (Ta = 25 C) 2 4

 8.1. Size:202K  toshiba
 ssm6k210fe.pdf

SSM6K210FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K210FE High-Speed Switching Applications Power Management Switch Applications Unit mm 4.0-V drive Low ON-resistance Ron = 371 m (max) (@VGS = 4.0 V), Ron = 228 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS

 8.2. Size:198K  toshiba
 ssm6k203fe.pdf

SSM6K203FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K203FE High-Speed Switching Applications Unit mm Power Management Switch Applications 1.5 V drive Low ON-resistance Ron = 153 m (max) (@VGS = 1.5V) Ron = 106 m (max) (@VGS = 1.8V) Ron = 76 m (max) (@VGS = 2.5V) Ron = 61 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta

 8.3. Size:197K  toshiba
 ssm6k204fe.pdf

SSM6K204FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K204FE High-Speed Switching Applications Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance Ron = 307 m (max) (@VGS = 1.5V) Ron = 214 m (max) (@VGS = 1.8V) Ron = 164 m (max) (@VGS = 2.5V) Ron = 126 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta

 8.4. Size:278K  toshiba
 ssm6k22fe.pdf

SSM6K22FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM6K22FE High Current Switching Applications Unit mm DC-DC Converter Suitable for high-density mounting due to compact package Low on resistance Ron = 170 m (max) (@VGS = 4.0 V) Ron = 230 m (max) (@VGS = 2.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain

 8.5. Size:213K  toshiba
 ssm6k217fe.pdf

SSM6K217FE MOSFETs Silicon N-Channel MOS SSM6K217FE SSM6K217FE SSM6K217FE SSM6K217FE 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 155 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) =

 8.6. Size:153K  toshiba
 ssm6k24fe.pdf

SSM6K24FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K24FE High Speed Switching Applications Unit mm 1.6 0.05 Optimum for high-density mounting in small packages Low on-resistance Ron = 145m (max) (@VGS = 4.5 V) 1.2 0.05 Ron = 180m (max) (@VGS = 2.5 V) 1 6 Maximum Ratings (Ta = 25 C) 5 2 Characteristics Symbol Rating Unit 4

 8.7. Size:189K  toshiba
 ssm6k208fe.pdf

SSM6K208FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K208FE High-Speed Switching Applications Power Management Switch Applications Unit mm 1.8V drive Low ON-resistance Ron = 296m (max) (@VGS = 1.8 V) Ron = 177m (max) (@VGS = 2.5 V) Ron = 133m (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rati

 8.8. Size:244K  toshiba
 ssm6k202fe.pdf

SSM6K202FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K202FE Unit mm High-Speed Switching Applications Power Management Switch Applications 1.8 V drive Low ON-resistance Ron = 145 m (max) (@VGS = 1.8V) Ron = 101 m (max) (@VGS = 2.5V) Ron = 85 m (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rat

 8.9. Size:197K  toshiba
 ssm6k211fe.pdf

SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS ) SSM6K211FE High-Speed Switching Applications Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance Ron = 118 m (max) (@VGS = 1.5 V) Ron = 82 m (max) (@VGS = 1.8 V) Ron = 59 m (max) (@VGS = 2.5 V) Ron = 47 m (max) (@VGS = 4.5 V) Absolute Maximum