BUK203-50X Todos los transistores

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BUK203-50X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK203-50X

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 50 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.22 Ohm

Empaquetado / Estuche: SOT26301

Búsqueda de reemplazo de MOSFET BUK203-50X

 

BUK203-50X Datasheet (PDF)

1.1. buk203-50y 1.pdf Size:92K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification PowerMOS transistor BUK203-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICA

1.2. buk203-50x 1.pdf Size:91K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICA

5.1. buk202-50x 1.pdf Size:93K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification PowerMOS transistor BUK202-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATI

5.2. buk201-50x 1.pdf Size:95K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification PowerMOS transistor BUK201-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 6 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATI

5.3. buk202-50y 1.pdf Size:93K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATI

5.4. buk207-50y 1.pdf Size:94K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification TOPFET high side switch BUK207-50Y SMD version of BUK203-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMETE

5.5. buk205-50y 1.pdf Size:98K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification TOPFET high side switch BUK205-50Y SMD version of BUK201-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 6 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMETER

5.6. buk204-50x 1.pdf Size:98K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification TOPFET high side switch BUK204-50X SMD version of BUK200-50X DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMETE

5.7. buk201-50y 1.pdf Size:96K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification PowerMOS transistor BUK201-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 6 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATI

5.8. buk205-50x 1.pdf Size:97K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification TOPFET high side switch BUK205-50X SMD version of BUK201-50X DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 6 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMETER

5.9. buk204-50y 1.pdf Size:99K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification TOPFET high side switch BUK204-50Y SMD version of BUK200-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMETE

5.10. buk200-50x 1.pdf Size:96K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification PowerMOS transistor BUK200-50X TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICA

5.11. buk206-50y 1.pdf Size:95K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification TOPFET high side switch BUK206-50Y SMD version of BUK202-50Y DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMETER

5.12. buk207-50x 1.pdf Size:93K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification TOPFET high side switch BUK207-50X SMD version of BUK203-50X DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMETE

5.13. buk206-50x 1.pdf Size:94K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification TOPFET high side switch BUK206-50X SMD version of BUK202-50X DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9 A 5 pin plastic surface mount envelope, configured as a single high side switch. SYMBOL PARAMETER

5.14. buk200-50y 1.pdf Size:97K _philips

BUK203-50X
BUK203-50X

Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5 A 5 pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICA

Otros transistores... BUK110-50GS , BUK111-50GL , BUK112-50GL , BUK114-50L , BUK114-50S , BUK116-50L , BUK116-50S , BUK200-50X , 2SK105 , BUK203-50Y , BUK204-50Y , BUK207-50X , BUK207-50Y , BUK426-1000A , BUK426-1000B , BUK436W-1000B , BUK436W-200A .

 


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