SSM6K30FE Todos los transistores

 

SSM6K30FE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM6K30FE
   Código: KA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Cossⓘ - Capacitancia de salida: 47 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
   Paquete / Cubierta: SOT563 ES6

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SSM6K30FE Datasheet (PDF)

 ..1. Size:261K  toshiba
ssm6k30fe.pdf

SSM6K30FE
SSM6K30FE

SSM6K30FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) SSM6K30FE High-speed switching Unit: mm DC-DC Converter Small package Low RDS (ON): RDS(ON) = 210 m (max) (@VGS = 10 V) : R DS(ON) = 420 m (max) (@VGS = 4 V) High-speed switching: ton = 19 ns (typ.) : toff = 10 ns (typ.) Absolute Maximum Ratings (Ta = 25C) 1,2,5,6

 8.1. Size:200K  toshiba
ssm6k34tu.pdf

SSM6K30FE
SSM6K30FE

SSM6K34TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K34TU High Current Switching Applications Unit: mmPower Management Switch Applications 4.5V drive Low on resistance: :Ron = 77 m (max) (@VGS = 4.5 V) :Ron = 50 m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS 30 VGate

 8.2. Size:93K  toshiba
ssm6k31fe.pdf

SSM6K30FE
SSM6K30FE

SSM6K31FE Silicon P Channel MOS Type (-MOS) SSM6K31FE TENTATIVE High speed switching Unit: mm DC-DC Converter small package Low RDS (ON) : Ron = 240 m (typ) (@VGS = 10 V) : Ron = 400 m (typ) (@VGS = 4 V) Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 20 V 1,2,5,6 :

 8.3. Size:819K  toshiba
ssm6k32tu.pdf

SSM6K30FE
SSM6K30FE

SSM6K32TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K32TU Unit: mm Relay drive, DC/DC converter application 4Vdrive Low on resistance: Ron = 440m (max) (@VGS = 4 V) Ron = 300m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25) Characteristics Symbol Rating UnitDrain-Source voltage VDS 60 VGate-Source voltage VGSS 20 VDC ID 2

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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