SSM6K407TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6K407TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: UF6

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SSM6K407TU datasheet

 ..1. Size:321K  toshiba
 ssm6k407tu.pdf pdf_icon

SSM6K407TU

SSM6K407TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K407TU Unit mm DC-DC Converter, Relay Drive and Motor Drive Applications 2.1 0.1 1.7 0.1 1 6 4V drive Low ON-resistance Ron = 440m (max) (@VGS = 4 V) 2 5 Ron = 300m (max) (@VGS = 10 V) 3 4 Absolute Maximum Ratings (Ta = 25 ) (Note) 1,2,5,6 Drain Characteristic Symbol Rating U

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SSM6K407TU

SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU High-Speed Switching Applications 4.5-V drive Unit mm Low ON-resistance Ron = 38.5 m (max) (@VGS = 4.5 V) 2.1 0.1 Ron = 25.0 m (max) (@VGS = 10 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) 1 6 Characteristics Symbol Rating Unit 2 5 Drain source voltage VDSS 30 V 3 4

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 ssm6k403tu.pdf pdf_icon

SSM6K407TU

SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU Power Management Switch Applications UNIT mm High-Speed Switching Applications 2.1 0.1 1.7 0.1 1 6 1.5V drive Low ON-resistance Ron = 66m (max) (@VGS = 1.5V) 2 5 Ron = 43m (max) (@VGS = 1.8V) 3 4 Ron = 32m (max) (@VGS = 2.5V) Ron = 28m (max) (@VGS = 4.0V) Absolute

 7.3. Size:193K  toshiba
 ssm6k404tu.pdf pdf_icon

SSM6K407TU

SSM6K404TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K404TU High-Speed Switching Applications Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 147 m (max) (@VGS = 1.5 V) 2.1 0.1 RDS(ON) = 100 m (max) (@VGS = 1.8 V) 1.7 0.1 RDS(ON) = 70 m (max) (@VGS = 2.5 V) RDS(ON) = 55 m (max) (@VGS =

MOSTRAR MÁS

Otros transistores... SSM6K30FE, SSM6K31FE, SSM6K32TU, SSM6K34TU, SSM6K403TU, SSM6K404TU, SSM6K405TU, SSM6K406TU, AO4468, SSM6K411TU, SSM6L05FU, SSM6L09FU, SSM6L10TU, SSM6L11TU, SSM6L12TU, SSM6L13TU, SSM6L14FE