SSM6L09FU Todos los transistores

 ..1. Size:242K  toshiba
 ssm6l09fu.pdf

SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type( -MOSVI) SSM6L09FU Power Management Switch High Speed Switching Applications Unit mm Small package Low on-resistance Q1 RDS(ON) = 0.7 (max) (@VGS = 10 V) Q2 RDS(ON) = 2.7 (max) (@VGS = -10 V) Q1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source volt

 8.1. Size:179K  toshiba
 ssm6l05fu.pdf

SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch Unit mm High Speed Switching Applications Small package Low on resistance Q1 Ron = 0.8 (max) (@VGS = 4 V) Q2 Ron = 3.3 (max) (@VGS = -4 V) Low gate threshold voltage Q1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drai

 9.1. Size:232K  toshiba
 ssm6l36tu.pdf

SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU Unit mm High-Speed Switching Applications 2.1 0.1 1.7 0.1 1.5-V drive Low ON-resistance Q1 N-ch Ron = 1.52 (max) (@VGS = 1.5 V) 1 6 Ron = 1.14 (max) (@VGS = 1.8 V) 2 5 Ron = 0.85 (max) (@VGS = 2.5 V) 3 4 Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS =

 9.2. Size:233K  toshiba
 ssm6l13tu.pdf

SSM6L13TU TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type SSM6L13TU Power Management Switch Applications High-Speed Switching Applications Unit mm 2.1 0.1 1.8-V drive N ch , P ch 2 in 1 1.7 0.1 Low ON resistance Nch RDS(ON) = 235 m (max) (@VGS = 1.8 V) RDS(ON) = 178 m (max) (@VGS = 2.5 V) Pch RDS(ON) = 460 m (max) (@

 9.3. Size:233K  toshiba
 ssm6l14fe.pdf

SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE Power Management Switch Applications High-Speed Switching Applications Unit mm 1.6 0.05 N-ch 1.5-V drive P-ch 1.5-V drive 1.2 0.05 N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch RDS(ON) = 330 m (max) (@VGS = 2.5 V) 1 6 RDS(ON) = 240 m (max) (@VGS = 4.5 V) Q2 P-

 9.4. Size:222K  toshiba
 ssm6l36fe.pdf

SSM6L36FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE High-Speed Switching Applications Unit mm 1.6 0.05 1.5-V drive 1.2 0.05 Low ON-resistance Q1 Nch Ron = 1.52 (max) (@VGS = 1.5 V) Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) 1 6 Ron = 0.66 (max) (@VGS = 4.5 V) Ron = 0.63 (max) (@VGS = 5.0 V) 2

 9.5. Size:244K  toshiba
 ssm6l39tu.pdf

SSM6L39TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L39TU Power Management Switch Applications High-Speed Switching Applications Unit mm 2.1 0.1 N-ch 1.5-V drive 1.7 0.1 P-ch 1.8-V drive N-ch, P-ch, 2-in-1 1 6 Low ON-resistance Q1 N-ch Ron = 247 m (max) (@VGS = 1.5 V) Ron = 190 m (max) (@VGS = 1.8 V) 2 5 Ron = 139 m

 9.6. Size:239K  toshiba
 ssm6l40tu.pdf

SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU Power Management Switch Applications High-Speed Switching Applications Unit mm 2.1 0.1 N-ch 4.0-V drive 1.7 0.1 P-ch 4.0 -V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch Ron = 182 m (max) (@VGS = 4 V) 1 6 Ron = 122 m (max) (@VGS = 10 V) 2 5 Q2 P-ch R

 9.7. Size:218K  toshiba
 ssm6l35fe.pdf

SSM6L35FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE High-Speed Switching Applications Unit mm Analog Switch Applications 1.6 0.05 1.2 0.05 N-ch 1.2-V drive P-ch 1.2-V drive N-ch, P-ch, 2-in-1 1 6 Low ON-resistance Q1 N-ch Ron = 20 (max) (@VGS = 1.2 V) 2 5 Ron = 8 (max) (@VGS = 1.5 V) Ron = 4 (max) (

 9.8. Size:224K  toshiba
 ssm6l35fu.pdf

 9.9. Size:214K  toshiba
 ssm6l11tu.pdf

SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1 RDS(ON) = 395m (max) (@VGS = 1.8 V) Q2 RDS(ON) = 430m (max) (@VGS = -2.5 V) Unit mm 2.1 0.1 Q1 Absolute Maximum Ratings (Ta = 25 C) 1.7 0.1 Characteristics Symbol Rating U

 9.10. Size:209K  toshiba
 ssm6l10tu.pdf

SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance Q1 Ron = 395m (max) (@VGS = 1.8 V) Unit mm Q2 Ron = 980m (max) (@VGS = -1.8 V) 2.1 0.1 1.7 0.1 Q1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 1

 9.11. Size:204K  toshiba
 ssm6l16fe.pdf

SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type( -MOSVI) SSM6L16FE High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance Q1 RDS(ON) = 4 (max) (@VGS = 2.5 V) Q2 RDS(ON) = 12 (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source volta

 9.12. Size:233K  toshiba
 ssm6l12tu.pdf

SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1 RDS(ON) = 180m (max) (@VGS = 2.5 V) Unit mm Q2 RDS(ON) = 430m (max) (@VGS = -2.5 V) 2.1 0.1 1.7 0.1 Q1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating