SSM6L10TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6L10TU

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 44 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm

Encapsulados: UF6

 Búsqueda de reemplazo de SSM6L10TU MOSFET

- Selecciónⓘ de transistores por parámetros

 

SSM6L10TU datasheet

 ..1. Size:209K  toshiba
 ssm6l10tu.pdf pdf_icon

SSM6L10TU

SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance Q1 Ron = 395m (max) (@VGS = 1.8 V) Unit mm Q2 Ron = 980m (max) (@VGS = -1.8 V) 2.1 0.1 1.7 0.1 Q1 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 1

 8.1. Size:233K  toshiba
 ssm6l13tu.pdf pdf_icon

SSM6L10TU

SSM6L13TU TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type SSM6L13TU Power Management Switch Applications High-Speed Switching Applications Unit mm 2.1 0.1 1.8-V drive N ch , P ch 2 in 1 1.7 0.1 Low ON resistance Nch RDS(ON) = 235 m (max) (@VGS = 1.8 V) RDS(ON) = 178 m (max) (@VGS = 2.5 V) Pch RDS(ON) = 460 m (max) (@

 8.2. Size:233K  toshiba
 ssm6l14fe.pdf pdf_icon

SSM6L10TU

SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE Power Management Switch Applications High-Speed Switching Applications Unit mm 1.6 0.05 N-ch 1.5-V drive P-ch 1.5-V drive 1.2 0.05 N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch RDS(ON) = 330 m (max) (@VGS = 2.5 V) 1 6 RDS(ON) = 240 m (max) (@VGS = 4.5 V) Q2 P-

 8.3. Size:214K  toshiba
 ssm6l11tu.pdf pdf_icon

SSM6L10TU

SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1 RDS(ON) = 395m (max) (@VGS = 1.8 V) Q2 RDS(ON) = 430m (max) (@VGS = -2.5 V) Unit mm 2.1 0.1 Q1 Absolute Maximum Ratings (Ta = 25 C) 1.7 0.1 Characteristics Symbol Rating U

MOSTRAR MÁS

Otros transistores... SSM6K403TU, SSM6K404TU, SSM6K405TU, SSM6K406TU, SSM6K407TU, SSM6K411TU, SSM6L05FU, SSM6L09FU, IRF740, SSM6L11TU, SSM6L12TU, SSM6L13TU, SSM6L14FE, SSM6L16FE, SSM6L35FE, SSM6L35FU, SSM6L36FE