SSM6N15FE Todos los transistores

 

SSM6N15FE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM6N15FE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 8.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: SOT563 ES6
 

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SSM6N15FE Datasheet (PDF)

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SSM6N15FE

SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Unit: mmAnalog Switching Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage V

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SSM6N15FE

SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Unit: mmAnalog Switching Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage V

 7.1. Size:166K  toshiba
 ssm6n15afe.pdf pdf_icon

SSM6N15FE

SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications Unit: mm1.60.05 2.5 V drive N-ch 2-in-11.20.05 Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1 6Absolute Maximum Ratings (Ta = 25C) 25(Q1, Q2 Common) 3 4Characteristics Symbol

 7.2. Size:190K  toshiba
 ssm6n15afu.pdf pdf_icon

SSM6N15FE

SSM6N15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFU Load Switching Applications Unit: mm 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDSS

MOSTRAR MÁS

Otros transistores... SSM6L36TU , SSM6L39TU , SSM6L40TU , SSM6N04FU , SSM6N05FU , SSM6N09FU , SSM6N15AFE , SSM6N15AFU , IRFB4227 , SSM6N15FU , SSM6N16FE , SSM6N16FU , SSM6N17FU , SSM6N24TU , SSM6N25TU , SSM6N29TU , SSM6N35FE .

History: SHD225714 | HSW2N15 | RU1E002SP | IRF6618 | HM3407A | MCU05N60A | CEP6060L

 

 
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