SSM6N35FU Todos los transistores

 ..1. Size:186K  toshiba
 ssm6n35fu.pdf

SSM6N35FU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FU Unit mm High-Speed Switching Applications Analog Switch Applications 1.2-V drive N-ch 2-in-1 Low ON-resistance RDS(ON) = 20 (max) (@VGS = 1.2 V) RDS(ON) = 8 (max) (@VGS = 1.5 V) RDS(ON) = 4 (max) (@VGS = 2.5 V) RDS(ON) = 3 (max) (@VGS = 4.0 V) Absolute Maxi

 6.1. Size:186K  toshiba
 ssm6n35fe.pdf

SSM6N35FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FE High-Speed Switching Applications Unit mm Analog Switch Applications 1.6 0.05 1.2 0.05 1.2-V drive N-ch 2-in-1 1 6 Low ON-resistance Ron = 20 (max) (@VGS = 1.2 V) 2 5 Ron = 8 (max) (@VGS = 1.5 V) Ron = 4 (max) (@VGS = 2.5 V) 3 4 Ron = 3 (max) (@VG

 8.1. Size:191K  toshiba
 ssm6n37ctd.pdf

SSM6N37CTD TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37CTD Power Management Switch Applications Unit mm 1.5V drive Top View Low ON-resistance Ron = 5.60 (max) (@VGS = 1.5 V) 1.0 0.05 Ron = 4.05 (max) (@VGS = 1.8 V) 0.15 0.03 Ron = 3.02 (max) (@VGS = 2.5 V) 6 5 4 Ron = 2.20 (max) (@VGS = 4.5 V) Absolute Maximum Ratings

 8.2. Size:190K  toshiba
 ssm6n37fe.pdf

SSM6N37FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37FE High-Speed Switching Applications mm Analog Switching Applications 1.6 0.05 1.2 0.05 1.5-V drive Suitable for high-density mounting due to compact package Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) 1 6 RDS(ON) = 4.05 (max) (@VGS = 1.8 V) 2 RDS(ON)

 8.3. Size:196K  toshiba
 ssm6n36fe.pdf

SSM6N36FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36FE High-Speed Switching Applications Unit mm 1.5-V drive 1.6 0.05 Low ON-resistance Ron = 1.52 (max) (@VGS = 1.5 V) 1.2 0.05 Ron = 1.14 (max) (@VGS = 1.8 V) Ron = 0.85 (max) (@VGS = 2.5 V) Ron = 0.66 (max) (@VGS = 4.5 V) 1 6 Ron = 0.63 (max) (@VGS = 5.0 V

 8.4. Size:197K  toshiba
 ssm6n36tu.pdf

SSM6N36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36TU High-Speed Switching Applications Unit mm 2.1 0.1 1.5-V drive 1.7 0.1 Low ON-resistance Ron = 1.52 (max) (@VGS = 1.5 V) Ron = 1.14 (max) (@VGS = 1.8 V) 1 6 Ron = 0.85 (max) (@VGS = 2.5 V) Ron = 0.66 (max) (@VGS = 4.5 V) 2 5 Ron = 0.63 (max) (@VGS = 5

 8.5. Size:204K  toshiba
 ssm6n39tu.pdf

SSM6N39TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N39TU Power Management Switch Applications Unit mm High-Speed Switching Applications 2.1 0.1 1.7 0.1 1.5-V drive 1 6 N-ch 2-in-1 2 5 Low ON-resistance Ron = 247m (max) (@VGS = 1.5 V) Ron = 190m (max) (@VGS = 1.8 V) 3 4 Ron = 139m (max) (@VGS = 2.5 V) Ron = 119m (

 8.6. Size:214K  toshiba
 ssm6n37fu.pdf

SSM6N37FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU High Speed Switching Applications Analog Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) RDS(ON) = 4.05 (max) (@VGS = 1.8 V) RDS(ON) = 3.02 (max) (@VGS = 2.5 V) RDS(ON) = 2.20 (max) (@VGS = 4.5 V) Absolute Maximum Ratin