SSM6N36TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM6N36TU
   Código: NX
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 1.23 nC
   Cossⓘ - Capacitancia de salida: 10.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.63 Ohm
   Paquete / Cubierta: UF6

Búsqueda de reemplazo de MOSFET SSM6N36TU

SSM6N36TU Datasheet (PDF)

..1. Size:197K toshiba
ssm6n36tu.pdf

SSM6N36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36TU High-Speed Switching Applications Unit: mm2.10.1 1.5-V drive 1.70.1 Low ON-resistance: Ron = 1.52 (max) (@VGS = 1.5 V) : Ron = 1.14 (max) (@VGS = 1.8 V) 1 6: Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) 2 5: Ron = 0.63 (max) (@VGS = 5

7.1. Size:196K toshiba
ssm6n36fe.pdf

SSM6N36FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36FE High-Speed Switching Applications Unit: mm 1.5-V drive 1.60.05 Low ON-resistance: Ron = 1.52 (max) (@VGS = 1.5 V) 1.20.05: Ron = 1.14 (max) (@VGS = 1.8 V) : Ron = 0.85 (max) (@VGS = 2.5 V) : Ron = 0.66 (max) (@VGS = 4.5 V) 1 6: Ron = 0.63 (max) (@VGS = 5.0 V

8.1. Size:191K toshiba
ssm6n37ctd.pdf

SSM6N37CTD TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37CTD Power Management Switch Applications Unit: mm 1.5V drive Top View Low ON-resistance Ron = 5.60 (max) (@VGS = 1.5 V) 1.00.05Ron = 4.05 (max) (@VGS = 1.8 V) 0.150.03Ron = 3.02 (max) (@VGS = 2.5 V) 6 5 4Ron = 2.20 (max) (@VGS = 4.5 V) Absolute Maximum Ratings

8.2. Size:190K toshiba
ssm6n37fe.pdf

SSM6N37FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37FE High-Speed Switching Applications : mm Analog Switching Applications 1.60.051.20.05 1.5-V drive Suitable for high-density mounting due to compact package Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) 1 6RDS(ON) = 4.05 (max) (@VGS = 1.8 V) 2RDS(ON)

8.3. Size:204K toshiba
ssm6n39tu.pdf

SSM6N39TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N39TU Power Management Switch Applications Unit: mm High-Speed Switching Applications 2.10.1 1.70.1 1.5-V drive 1 6 N-ch 2-in-1 2 5 Low ON-resistance: Ron = 247m (max) (@VGS = 1.5 V) Ron = 190m (max) (@VGS = 1.8 V) 3 4Ron = 139m (max) (@VGS = 2.5 V) Ron = 119m (

8.4. Size:186K toshiba
ssm6n35fu.pdf

SSM6N35FU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FU Unit: mm High-Speed Switching Applications Analog Switch Applications 1.2-V drive N-ch 2-in-1 Low ON-resistance RDS(ON) = 20 (max) (@VGS = 1.2 V) RDS(ON) = 8 (max) (@VGS = 1.5 V) RDS(ON) = 4 (max) (@VGS = 2.5 V) RDS(ON) = 3 (max) (@VGS = 4.0 V) Absolute Maxi

8.5. Size:214K toshiba
ssm6n37fu.pdf

SSM6N37FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU High Speed Switching Applications Analog Switch Applications Unit: mm 1.5V drive Low ON-resistance RDS(ON) = 5.60 (max) (@VGS = 1.5 V) RDS(ON) = 4.05 (max) (@VGS = 1.8 V) RDS(ON) = 3.02 (max) (@VGS = 2.5 V) RDS(ON) = 2.20 (max) (@VGS = 4.5 V) Absolute Maximum Ratin

8.6. Size:186K toshiba
ssm6n35fe.pdf

SSM6N35FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FE High-Speed Switching Applications Unit: mm Analog Switch Applications 1.60.051.20.05 1.2-V drive N-ch 2-in-1 1 6 Low ON-resistance: Ron = 20 (max) (@VGS = 1.2 V) 25: Ron = 8 (max) (@VGS = 1.5 V) : Ron = 4 (max) (@VGS = 2.5 V) 3 4: Ron = 3 (max) (@VG

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