SSM6P05FU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM6P05FU
   Código: DH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V
   Cossⓘ - Capacitancia de salida: 21 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.3 Ohm
   Paquete / Cubierta: SOT363 SC88 US6

Búsqueda de reemplazo de MOSFET SSM6P05FU

SSM6P05FU Datasheet (PDF)

..1. Size:130K toshiba
ssm6p05fu.pdf

SSM6P05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P05FU Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance : Ron = 3.3 (max) (@VGS = -4 V) : Ron = 4.0 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Ratin

8.1. Size:138K toshiba
ssm6p09fu.pdf

SSM6P09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P09FU High Speed Switching Applications Unit: mm Small package Low Drain-Source ON resistance. : Ron = 2.7 (max) (@VGS = -10 V) : Ron = 4.2 (max) (@VGS = -4 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate

9.1. Size:151K toshiba
ssm6p26tu.pdf

SSM6P26TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6P26TU High Speed Switching Applications Optimum for high-density mounting in small packages Unit: mm Low on-resistance: Ron = 230m (max) (@VGS = -4 V) 2.10.1Ron = 330m (max) (@VGS = -2.5 V) 1.70.1Ron = 980m (max) (@VGS = -1.8 V) 1 6Absolute Maximum Ratings (Ta = 25C)

9.2. Size:198K toshiba
ssm6p41fe.pdf

SSM6P41FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V) SSM6P41FE Power Management Switches 1.5-V drive Low on-resistance : RDS(ON) = 1.04 (max) (@VGS = -1.5 V) Unit: mm: RDS(ON) = 0.67 (max) (@VGS = -1.8 V) 1.60.05: RDS(ON) = 0.44 (max) (@VGS = -2.5 V) 1.20.05: RDS(ON) = 0.30 (max) (@VGS = -4.5 V) 1 6Absolute Maximum R

9.3. Size:197K toshiba
ssm6p16fe.pdf

SSM6P16FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM6P16FE High Speed Switching Applications Analog Switch Applications Small package Unit: mm Low on-resistance : R 8 (max) (@VGS 4 V) DS(ON) : R 12 (max) (@VGS 2.5 V) DS(ON): R 45 (max) (@VGS 1.5 V) DS(ON)Absolute Maximum Ratings (Ta = 25

9.4. Size:189K toshiba
ssm6p36fe.pdf

SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE Power Management Switches 1.5-V drive Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) Unit: mmRon = 2.70 (max) (@VGS = -1.8 V) 1.60.05Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) 1.20.05Absolute Maximum Ratings (Ta = 25 C) 1 6(Common t

9.5. Size:150K toshiba
ssm6p25tu.pdf

SSM6P25TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6P25TU High Speed Switching Applications Optimum for high-density mounting in small packages Unit: mm Low on-resistance: Ron = 260m (max) (@VGS = -4 V) 2.10.1Ron = 430m (max) (@VGS = -2.5 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1 6(Q1, Q2 Common) 52Characterist

9.6. Size:190K toshiba
ssm6p36tu.pdf

SSM6P36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36TU Power Management Switches 1.5-V drive Unit: mm Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) 2.10.1: Ron = 2.70 (max) (@VGS = -1.8 V) 1.70.1: Ron = 1.60 (max) (@VGS = -2.8 V) : Ron = 1.31 (max) (@VGS = -4.5 V) 1 6Absolute Maximum Ratings (Ta = 25 C) 2 5

9.7. Size:153K toshiba
ssm6p28tu.pdf

SSM6P28TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P28TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive2.10.1 P-ch 2-in-11.70.1 Low ON-resistance: Ron = 460 m (max) (@VGS = -1.8 V) Ron = 306 m (max) (@VGS = -2.5 V) 1 6Ron = 234 m (max) (@VGS = -4.0 V) 52Absolute Maximum Rati

9.8. Size:209K toshiba
ssm6p15fe.pdf

SSM6P15FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30

9.9. Size:186K toshiba
ssm6p15fu.pdf

SSM6P15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS -3

9.10. Size:179K toshiba
ssm6p47nu.pdf

SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) SSM6P47NU Power Management Switch Applications Unit: mm2.00.1B 1.5V drive A Low ON-resistance:RDS(on) = 242 m (max) (@VGS = -1.5 V) RDS(on) = 170 m (max) (@VGS = -1.8 V) RDS(on) = 125 m (max) (@VGS = -2.5 V) RDS(on) = 95 m (max) (@VGS = -4.5 V) 00.05Absolute Maximum

9.11. Size:185K toshiba
ssm6p16fu.pdf

SSM6P16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM6P16FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Char

9.12. Size:170K toshiba
ssm6p49nu.pdf

SSM6P49NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P49NU Power Management Switch Applications Unit: mm2.00.1B 1.8V drive A Low ON-resistance: RDS(on) = 157 m (max) (@VGS = -1.8 V) RDS(on) = 76 m (max) (@VGS = -2.5 V) RDS(on) = 56 m (max) (@VGS = -4.5 V) RDS(on) = 45 m (max) (@VGS = -10V) 00.05Absolute Maximum Ratings (Ta =

9.13. Size:194K toshiba
ssm6p35fu.pdf

SSM6P35FU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FU High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance : Ron = 44 (max) (@VGS = -1.2 V) : Ron = 22 (max) (@VGS = -1.5 V) : Ron = 11 (max) (@VGS = -2.5 V) : Ron = 8 (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 2

9.14. Size:170K toshiba
ssm6p54tu.pdf

SSM6P54TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P54TU High-Speed Switching Applications Unit : mm Power Management Switch Applications 2.10.1 1.5 V drive 1.70.1 Suitable for high-density mounting due to compact package Low on-resistance : Ron = 228 m (max) (@ VGS = -2.5 V) : Ron = 350 m (max) (@ VGS = -1.8 V) 1 6: Ron =

9.15. Size:184K toshiba
ssm6p40tu.pdf

SSM6P40TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P40TU Power Management Switch Applications Unit: mm2.10.1 High-Speed Switching Applications 1.70.1 4.0 V drive P-ch, 2-in-1 1 6 Low ON-resistance: Ron = 403m (max) (@VGS = 4 V) 2 5Ron = 226m (max) (@VGS = 10 V) 3 4Absolute Maximum Ratings (Ta = 25 C) (Q1,Q2 C

9.16. Size:202K toshiba
ssm6p39tu.pdf

SSM6P39TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P39TU Unit: mm Power Management Switch Applications 2.10.1 High-Speed Switching Applications 1.70.11 6 1.8 V drive 2 5 P-ch 2-in-1 Low ON-resistance: Ron = 430m (max) (@VGS = 1.8 V) 3 4Ron = 294m (max) (@VGS = 2.5 V) Ron = 213m (max) (@VGS = 4.0 V) Abso

9.17. Size:189K toshiba
ssm6p35fe.pdf

SSM6P35FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FE High-Speed Switching Applications Unit: mm Analog Switch Applications 1.60.051.20.05 1.2-V drive Low ON-resistance : Ron = 44 (max) (@VGS = -1.2 V) : Ron = 22 (max) (@VGS = -1.5 V) 1 6 : Ron = 11 (max) (@VGS = -2.5 V) 25: Ron = 8 (max) (@VGS = -4.0 V) 3

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