SSM6P05FU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM6P05FU
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua
de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 21 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.3 Ohm
Encapsulados: SOT363
SC88
US6
Búsqueda de reemplazo de SSM6P05FU MOSFET
- Selecciónⓘ de transistores por parámetros
SSM6P05FU datasheet
..1. Size:130K toshiba
ssm6p05fu.pdf 
SSM6P05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P05FU Power Management Switch Unit mm High Speed Switching Applications Small package Low on resistance Ron = 3.3 (max) (@VGS = -4 V) Ron = 4.0 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Ratin
8.1. Size:138K toshiba
ssm6p09fu.pdf
SSM6P09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P09FU High Speed Switching Applications Unit mm Small package Low Drain-Source ON resistance. Ron = 2.7 (max) (@VGS = -10 V) Ron = 4.2 (max) (@VGS = -4 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate
9.1. Size:151K toshiba
ssm6p26tu.pdf
SSM6P26TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6P26TU High Speed Switching Applications Optimum for high-density mounting in small packages Unit mm Low on-resistance Ron = 230m (max) (@VGS = -4 V) 2.1 0.1 Ron = 330m (max) (@VGS = -2.5 V) 1.7 0.1 Ron = 980m (max) (@VGS = -1.8 V) 1 6 Absolute Maximum Ratings (Ta = 25 C)
9.2. Size:198K toshiba
ssm6p41fe.pdf
SSM6P41FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V) SSM6P41FE Power Management Switches 1.5-V drive Low on-resistance RDS(ON) = 1.04 (max) (@VGS = -1.5 V) Unit mm RDS(ON) = 0.67 (max) (@VGS = -1.8 V) 1.6 0.05 RDS(ON) = 0.44 (max) (@VGS = -2.5 V) 1.2 0.05 RDS(ON) = 0.30 (max) (@VGS = -4.5 V) 1 6 Absolute Maximum R
9.4. Size:189K toshiba
ssm6p36fe.pdf
SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE Power Management Switches 1.5-V drive Low ON-resistance Ron = 3.60 (max) (@VGS = -1.5 V) Unit mm Ron = 2.70 (max) (@VGS = -1.8 V) 1.6 0.05 Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) 1.2 0.05 Absolute Maximum Ratings (Ta = 25 C) 1 6 (Common t
9.5. Size:150K toshiba
ssm6p25tu.pdf
SSM6P25TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6P25TU High Speed Switching Applications Optimum for high-density mounting in small packages Unit mm Low on-resistance Ron = 260m (max) (@VGS = -4 V) 2.1 0.1 Ron = 430m (max) (@VGS = -2.5 V) 1.7 0.1 Absolute Maximum Ratings (Ta = 25 C) 1 6 (Q1, Q2 Common) 5 2 Characterist
9.6. Size:190K toshiba
ssm6p36tu.pdf
SSM6P36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36TU Power Management Switches 1.5-V drive Unit mm Low ON-resistance Ron = 3.60 (max) (@VGS = -1.5 V) 2.1 0.1 Ron = 2.70 (max) (@VGS = -1.8 V) 1.7 0.1 Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) 1 6 Absolute Maximum Ratings (Ta = 25 C) 2 5
9.7. Size:153K toshiba
ssm6p28tu.pdf
SSM6P28TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P28TU High-Speed Switching Applications Power Management Switch Applications Unit mm 1.8V drive 2.1 0.1 P-ch 2-in-1 1.7 0.1 Low ON-resistance Ron = 460 m (max) (@VGS = -1.8 V) Ron = 306 m (max) (@VGS = -2.5 V) 1 6 Ron = 234 m (max) (@VGS = -4.0 V) 5 2 Absolute Maximum Rati
9.8. Size:209K toshiba
ssm6p15fe.pdf
SSM6P15FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FE High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30
9.9. Size:186K toshiba
ssm6p15fu.pdf
SSM6P15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS -3
9.10. Size:179K toshiba
ssm6p47nu.pdf
SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) SSM6P47NU Power Management Switch Applications Unit mm 2.0 0.1 B 1.5V drive A Low ON-resistance RDS(on) = 242 m (max) (@VGS = -1.5 V) RDS(on) = 170 m (max) (@VGS = -1.8 V) RDS(on) = 125 m (max) (@VGS = -2.5 V) RDS(on) = 95 m (max) (@VGS = -4.5 V) 0 0.05 Absolute Maximum
9.11. Size:185K toshiba
ssm6p16fu.pdf
SSM6P16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOSVI) SSM6P16FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance RDS(ON) = 8 (max) (@VGS = -4 V) RDS(ON) = 12 (max) (@VGS = -2.5 V) RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Char
9.12. Size:170K toshiba
ssm6p49nu.pdf
SSM6P49NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P49NU Power Management Switch Applications Unit mm 2.0 0.1 B 1.8V drive A Low ON-resistance RDS(on) = 157 m (max) (@VGS = -1.8 V) RDS(on) = 76 m (max) (@VGS = -2.5 V) RDS(on) = 56 m (max) (@VGS = -4.5 V) RDS(on) = 45 m (max) (@VGS = -10V) 0 0.05 Absolute Maximum Ratings (Ta =
9.13. Size:194K toshiba
ssm6p35fu.pdf
SSM6P35FU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FU High-Speed Switching Applications Unit mm Analog Switch Applications 1.2-V drive Low ON-resistance Ron = 44 (max) (@VGS = -1.2 V) Ron = 22 (max) (@VGS = -1.5 V) Ron = 11 (max) (@VGS = -2.5 V) Ron = 8 (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 2
9.14. Size:170K toshiba
ssm6p54tu.pdf
SSM6P54TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P54TU High-Speed Switching Applications Unit mm Power Management Switch Applications 2.1 0.1 1.5 V drive 1.7 0.1 Suitable for high-density mounting due to compact package Low on-resistance Ron = 228 m (max) (@ VGS = -2.5 V) Ron = 350 m (max) (@ VGS = -1.8 V) 1 6 Ron =
9.15. Size:184K toshiba
ssm6p40tu.pdf
SSM6P40TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P40TU Power Management Switch Applications Unit mm 2.1 0.1 High-Speed Switching Applications 1.7 0.1 4.0 V drive P-ch, 2-in-1 1 6 Low ON-resistance Ron = 403m (max) (@VGS = 4 V) 2 5 Ron = 226m (max) (@VGS = 10 V) 3 4 Absolute Maximum Ratings (Ta = 25 C) (Q1,Q2 C
9.16. Size:202K toshiba
ssm6p39tu.pdf
SSM6P39TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P39TU Unit mm Power Management Switch Applications 2.1 0.1 High-Speed Switching Applications 1.7 0.1 1 6 1.8 V drive 2 5 P-ch 2-in-1 Low ON-resistance Ron = 430m (max) (@VGS = 1.8 V) 3 4 Ron = 294m (max) (@VGS = 2.5 V) Ron = 213m (max) (@VGS = 4.0 V) Abso
9.17. Size:189K toshiba
ssm6p35fe.pdf
SSM6P35FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FE High-Speed Switching Applications Unit mm Analog Switch Applications 1.6 0.05 1.2 0.05 1.2-V drive Low ON-resistance Ron = 44 (max) (@VGS = -1.2 V) Ron = 22 (max) (@VGS = -1.5 V) 1 6 Ron = 11 (max) (@VGS = -2.5 V) 2 5 Ron = 8 (max) (@VGS = -4.0 V) 3
Otros transistores... SSM6N42FE, SSM6N43FU, SSM6N44FE, SSM6N44FU, SSM6N48FU, SSM6N7002BFE, SSM6N7002BFU, SSM6N7002FU, AON7410, SSM6P09FU, SSM6P15FE, SSM6P15FU, SSM6P16FE, SSM6P16FU, SSM6P25TU, SSM6P26TU, SSM6P28TU
