SSM6P35FU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM6P35FU
Código: PZ
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VCossⓘ - Capacitancia de salida: 10.4 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
Paquete / Cubierta: SOT363 SC88 US6
Búsqueda de reemplazo de SSM6P35FU MOSFET
SSM6P35FU Datasheet (PDF)
ssm6p35fu.pdf

SSM6P35FU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FU High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance : Ron = 44 (max) (@VGS = -1.2 V) : Ron = 22 (max) (@VGS = -1.5 V) : Ron = 11 (max) (@VGS = -2.5 V) : Ron = 8 (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 2
ssm6p35fe.pdf

SSM6P35FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FE High-Speed Switching Applications Unit: mm Analog Switch Applications 1.60.051.20.05 1.2-V drive Low ON-resistance : Ron = 44 (max) (@VGS = -1.2 V) : Ron = 22 (max) (@VGS = -1.5 V) 1 6 : Ron = 11 (max) (@VGS = -2.5 V) 25: Ron = 8 (max) (@VGS = -4.0 V) 3
ssm6p36fe.pdf

SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE Power Management Switches 1.5-V drive Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) Unit: mmRon = 2.70 (max) (@VGS = -1.8 V) 1.60.05Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) 1.20.05Absolute Maximum Ratings (Ta = 25 C) 1 6(Common t
ssm6p36tu.pdf

SSM6P36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36TU Power Management Switches 1.5-V drive Unit: mm Low ON-resistance: Ron = 3.60 (max) (@VGS = -1.5 V) 2.10.1: Ron = 2.70 (max) (@VGS = -1.8 V) 1.70.1: Ron = 1.60 (max) (@VGS = -2.8 V) : Ron = 1.31 (max) (@VGS = -4.5 V) 1 6Absolute Maximum Ratings (Ta = 25 C) 2 5
Otros transistores... SSM6P15FE , SSM6P15FU , SSM6P16FE , SSM6P16FU , SSM6P25TU , SSM6P26TU , SSM6P28TU , SSM6P35FE , 20N50 , SSM6P36FE , SSM6P36TU , SSM6P39TU , SSM6P40TU , SSM6P41FE , SSM6P47NU , SSM6P49NU , SSM6P54TU .
History: RQJ0201UGDQA | HY3208APS | AP04N80R-HF | HGK027N10A | SI8800EDB | ME4920 | RQK0302GGDQS
History: RQJ0201UGDQA | HY3208APS | AP04N80R-HF | HGK027N10A | SI8800EDB | ME4920 | RQK0302GGDQS



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