SSM6P49NU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6P49NU

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: UDFN6

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SSM6P49NU datasheet

 ..1. Size:170K  toshiba
 ssm6p49nu.pdf pdf_icon

SSM6P49NU

SSM6P49NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P49NU Power Management Switch Applications Unit mm 2.0 0.1 B 1.8V drive A Low ON-resistance RDS(on) = 157 m (max) (@VGS = -1.8 V) RDS(on) = 76 m (max) (@VGS = -2.5 V) RDS(on) = 56 m (max) (@VGS = -4.5 V) RDS(on) = 45 m (max) (@VGS = -10V) 0 0.05 Absolute Maximum Ratings (Ta =

 8.1. Size:198K  toshiba
 ssm6p41fe.pdf pdf_icon

SSM6P49NU

SSM6P41FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V) SSM6P41FE Power Management Switches 1.5-V drive Low on-resistance RDS(ON) = 1.04 (max) (@VGS = -1.5 V) Unit mm RDS(ON) = 0.67 (max) (@VGS = -1.8 V) 1.6 0.05 RDS(ON) = 0.44 (max) (@VGS = -2.5 V) 1.2 0.05 RDS(ON) = 0.30 (max) (@VGS = -4.5 V) 1 6 Absolute Maximum R

 8.2. Size:179K  toshiba
 ssm6p47nu.pdf pdf_icon

SSM6P49NU

SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) SSM6P47NU Power Management Switch Applications Unit mm 2.0 0.1 B 1.5V drive A Low ON-resistance RDS(on) = 242 m (max) (@VGS = -1.5 V) RDS(on) = 170 m (max) (@VGS = -1.8 V) RDS(on) = 125 m (max) (@VGS = -2.5 V) RDS(on) = 95 m (max) (@VGS = -4.5 V) 0 0.05 Absolute Maximum

 8.3. Size:184K  toshiba
 ssm6p40tu.pdf pdf_icon

SSM6P49NU

SSM6P40TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P40TU Power Management Switch Applications Unit mm 2.1 0.1 High-Speed Switching Applications 1.7 0.1 4.0 V drive P-ch, 2-in-1 1 6 Low ON-resistance Ron = 403m (max) (@VGS = 4 V) 2 5 Ron = 226m (max) (@VGS = 10 V) 3 4 Absolute Maximum Ratings (Ta = 25 C) (Q1,Q2 C

MOSTRAR MÁS

Otros transistores... SSM6P35FE, SSM6P35FU, SSM6P36FE, SSM6P36TU, SSM6P39TU, SSM6P40TU, SSM6P41FE, SSM6P47NU, IRF1407, SSM6P54TU, TJ10S04M3L, TJ11A10M3, TJ150F06M3L, TJ15P04M3, TJ15S06M3L, TJ20A10M3, TJ20S04M3L