TK10A60D Todos los transistores

 

TK10A60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK10A60D
   Código: K10A60D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 45 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 10 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 25 nC
   Tiempo de subida (tr): 22 nS
   Conductancia de drenaje-sustrato (Cd): 135 pF
   Resistencia entre drenaje y fuente RDS(on): 0.75 Ohm
   Paquete / Cubierta: TO220SIS

 Búsqueda de reemplazo de MOSFET TK10A60D

 

TK10A60D Datasheet (PDF)

 ..1. Size:248K  toshiba
tk10a60d.pdf

TK10A60D TK10A60D

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK10A60D Unit: mmSwitching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) A

 ..2. Size:253K  inchange semiconductor
tk10a60d.pdf

TK10A60D TK10A60D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60DITK10A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.58 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

 0.1. Size:245K  toshiba
tk10a60d5.pdf

TK10A60D TK10A60D

TK10A60D5MOSFETs Silicon N-Channel MOS (-MOS)TK10A60D5TK10A60D5TK10A60D5TK10A60D51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.8 (typ.)(3) High f

 0.2. Size:252K  inchange semiconductor
tk10a60d5.pdf

TK10A60D TK10A60D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60D5ITK10A60D5FEATURESLow drain-source on-resistance:RDS(on) = 0.8 (typ.)Enhancement mode:Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

 7.1. Size:240K  toshiba
tk10a60w.pdf

TK10A60D TK10A60D

TK10A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK10A60WTK10A60WTK10A60WTK10A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.2. Size:238K  toshiba
tk10a60w5.pdf

TK10A60D TK10A60D

TK10A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK10A60W5TK10A60W5TK10A60W5TK10A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 85 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.35 (typ.) by used to Super Junction Stru

 7.3. Size:253K  inchange semiconductor
tk10a60w.pdf

TK10A60D TK10A60D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60W, ITK10A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.5 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

 7.4. Size:253K  inchange semiconductor
tk10a60w5.pdf

TK10A60D TK10A60D

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK10A60W5, lTK10A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.45Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.5 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

Otros transistores... TJ60S06M3L , TJ70A06J3 , TJ80S04M3L , TJ8S06M3L , TK100F04K3 , TK100F06K3 , TK10A50D , TK10A55D , IRFB3306 , TK10S04K3L , TK10X40D , TK11A45D , TK11A50D , TK11A55D , TK11A60D , TK11A65D , TK12A10K3 .

 

 
Back to Top

 


TK10A60D
  TK10A60D
  TK10A60D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SWF9N50D | SWF8N80K | SWF8N70K | SWF8N65D | SWF8N60D | SWF830D1 | SWF7N70K | SWF7N65M | SWF7N65K2 | SWF7N65K | SWF7N65DD | SWF7N60K | SWF740D | SWF6N90D | SWF6N70DB | SWF6N70D

 

 

 
Back to Top