TK11A60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK11A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A60DITK11A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.54 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

TK11A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK11A65WTK11A65WTK11A65WTK11A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.33 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

TK11A65DMOSFETs Silicon N-Channel MOS (-MOS)TK11A65DTK11A65DTK11A65DTK11A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.54 (typ.)(2) High forward transfer admittance: |Yfs| = 7.5 S (typ.)(3) Low leakage current: ID

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A65WITK11A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.39Easy to control Gate switchingEnhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators