TK12A53D Todos los transistores

 ..1. Size:180K  toshiba
 tk12a53d.pdf

TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12A53D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.5 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 ..2. Size:252K  inchange semiconductor
 tk12a53d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK12A53D ITK12A53D FEATURES Low drain-source on-resistance RDS(ON) = 0.5 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(

 8.1. Size:238K  toshiba
 tk12a50w.pdf

TK12A50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12A50W TK12A50W TK12A50W TK12A50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 8.2. Size:276K  toshiba
 tk12a50d5.pdf

TK12A50D5 MOSFETs Silicon N-Channel MOS ( -MOS ) TK12A50D5 TK12A50D5 TK12A50D5 TK12A50D5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trrf = 50 ns (typ.), trr = 120 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.5 (typ.) (3) High

 8.3. Size:187K  toshiba
 tk12a55d.pdf

TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK12A55D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.48 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vt

 8.4. Size:254K  toshiba
 tk12a50d.pdf

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.45 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs

 8.5. Size:253K  inchange semiconductor
 tk12a50w.pdf

 8.6. Size:253K  inchange semiconductor
 tk12a50d5.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK12A50D5 ITK12A50D5 FEATURES Low drain-source on-resistance RDS(ON) = 0.5 (typ.) Enhancement mode Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING