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TK12A55D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK12A55D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 550 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.57 Ohm
   Paquete / Cubierta: TO220SIS
 

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TK12A55D Datasheet (PDF)

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TK12A55D

TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK12A55D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vt

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TK12A55D

TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 8.2. Size:238K  toshiba
 tk12a50w.pdf pdf_icon

TK12A55D

TK12A50WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A50WTK12A50WTK12A50WTK12A50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 8.3. Size:276K  toshiba
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TK12A55D

TK12A50D5MOSFETs Silicon N-Channel MOS (-MOS)TK12A50D5TK12A50D5TK12A50D5TK12A50D51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 120 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.)(3) High

MOSTRAR MÁS

Otros transistores... TK11A50D , TK11A55D , TK11A60D , TK11A65D , TK12A10K3 , TK12A45D , TK12A50D , TK12A53D , HY1906P , TK12A60D , TK12A60U , TK12A65D , TK12E60U , TK12J55D , TK12J60U , TK12X53D , TK12X60U .

History: 1N65L-K08-5060-R | 2SJ549L | KRF7309 | 4N80G-TN3-R | BLP05N08G-P | FQB9N50TM | 2SK1444LS

 

 
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