TK12A55D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK12A55D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 550 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.57 Ohm
   Paquete / Cubierta: TO220SIS

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TK12A55D Datasheet (PDF)

..1. Size:187K toshiba
tk12a55d.pdf

TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK12A55D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vt

8.1. Size:180K toshiba
tk12a53d.pdf

TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

8.2. Size:238K toshiba
tk12a50w.pdf

TK12A50WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A50WTK12A50WTK12A50WTK12A50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

8.3. Size:276K toshiba
tk12a50d5.pdf

TK12A50D5MOSFETs Silicon N-Channel MOS (-MOS)TK12A50D5TK12A50D5TK12A50D5TK12A50D51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 120 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.)(3) High

8.4. Size:254K toshiba
tk12a50d.pdf

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs

8.5. Size:252K inchange semiconductor
tk12a53d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK12A53DITK12A53DFEATURESLow drain-source on-resistance:RDS(ON) = 0.5 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

8.6. Size:253K inchange semiconductor
tk12a50w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12A50W,ITK12A50WFEATURESLow drain-source on-resistance: RDS(ON) = 0.3Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.6 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

8.7. Size:253K inchange semiconductor
tk12a50d5.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK12A50D5ITK12A50D5FEATURESLow drain-source on-resistance:RDS(ON) = 0.5 (typ.)Enhancement mode:Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

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