TK13A50D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK13A50D Datasheet (PDF)

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TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A50D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: Yfs = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode

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TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A50DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA

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INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A50DAITK13A50DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.39 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RAT

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TK13A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK13A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vt

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