TK13A60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK13A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A60DITK13A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.33 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor TK13A60WFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

TK13A65DMOSFETs Silicon N-Channel MOS (-MOS)TK13A65DTK13A65DTK13A65DTK13A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.4 (typ.)(2) High forward transfer admittance: |Yfs| = 7.5 S (typ.)(3) Low leakage current: IDS

TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: Yfs = 8.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 650 V) Enhancement-mod

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A65DITK13A65DFEATURESLow drain-source on-resistance:RDS(on) = 0.4 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK13A65UITK13A65UFEATURESLow drain-source on-resistance: RDS(ON) = 0.32 (typ.)Low leakage current: IDSS = 100A (max) (VDS = 650 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSw