TK18A50D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK18A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.22 (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK18A50DITK18A50DFEATURESLow drain-source on-resistance:RDS(on) = 0.22 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

TK18A30DMOSFETs Silicon N-Channel MOS (-MOS)TK18A30DTK18A30DTK18A30DTK18A30D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.1 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 300 V)(3) Enhancement mode: Vth =

TK18A60VMOSFETs Silicon N-Channel MOS (DTMOS)TK18A60VTK18A60VTK18A60VTK18A60V1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.165 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK18A30DITK18A30DFEATURESLow drain-source on-resistance:RDS(ON) = 0.1 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(