TK25A10K3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK25A10K3
   Código: K25A10K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 34 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO220SIS

Búsqueda de reemplazo de MOSFET TK25A10K3

TK25A10K3 Datasheet (PDF)

..1. Size:305K toshiba
tk25a10k3.pdf

TK25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK25A10K3 Swiching Regulator Applications Low drain-source ON resistance: RDS (ON) = 31 m (typ.) Unit: mm High forward transfer admittance: |Yfs| = 50 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

..2. Size:252K inchange semiconductor
tk25a10k3.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK25A10K3ITK25A10K3FEATURESLow drain-source on-resistance:RDS(ON) = 31m (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATIN

9.1. Size:219K toshiba
tk25a20d.pdf

TK25A20DMOSFETs Silicon N-Channel MOS (-MOS)TK25A20DTK25A20DTK25A20DTK25A20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.047 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth

9.2. Size:236K toshiba
tk25a60x.pdf

TK25A60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK25A60XTK25A60XTK25A60XTK25A60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.105 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

9.3. Size:363K toshiba
tk25a60x5.pdf

TK25A60X5MOSFETs Silicon N-Channel MOS (DTMOS-H)TK25A60X5TK25A60X5TK25A60X5TK25A60X51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 120 ns(typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(3) Easy to control Gate switc

9.4. Size:252K inchange semiconductor
tk25a20d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK25A20DITK25A20DFEATURESLow drain-source on-resistance:RDS(on) = 0.047 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

9.5. Size:253K inchange semiconductor
tk25a60x.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK25A60X,ITK25A60XFEATURESLow drain-source on-resistance: RDS(ON) = 0.105 (typ.)High-speed switching properties with lower capacitance.Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=1.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION

9.6. Size:253K inchange semiconductor
tk25a60x5.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK25A60X5, ITK25A60X5FEATURESLow drain-source on-resistance: RDS(ON) = 0.12 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=1.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regula

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