TK30A06J3A Todos los transistores

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 tk30a06j3a.pdf

TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK30A06J3A Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 34 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 60 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute M

 5.1. Size:2018K  cn vbsemi
 tk30a06j3.pdf

TK30A06J3 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 10 V 0.027 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Single

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 tk30a06n1.pdf

TK30A06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK30A06N1 TK30A06N1 TK30A06N1 TK30A06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 12.2 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3) Enha

 7.2. Size:253K  inchange semiconductor
 tk30a06n1.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK30A06N1 ITK30A06N1 FEATURES Low drain-source on-resistance RDS(ON) = 12.2m (typ.) (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.2mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUT