TK30A06J3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK30A06J3www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Single

TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK30A06J3A Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 34 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute M

TK30A06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK30A06N1TK30A06N1TK30A06N1TK30A06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 12.2 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enha

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK30A06N1ITK30A06N1FEATURESLow drain-source on-resistance:RDS(ON) = 12.2m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUT