TK3A65D Todos los transistores

 

TK3A65D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK3A65D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.25 Ohm
   Paquete / Cubierta: TO220SIS
 

 Búsqueda de reemplazo de TK3A65D MOSFET

   - Selección ⓘ de transistores por parámetros

 

TK3A65D Datasheet (PDF)

 ..1. Size:238K  toshiba
 tk3a65d.pdf pdf_icon

TK3A65D

TK3A65DMOSFETs Silicon N-Channel MOS (-MOS)TK3A65DTK3A65DTK3A65DTK3A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.93 (typ.)(2) High forward transfer admittance: |Yfs| = 2.2 S (typ.)(3) Low leakage current: IDSS =

 ..2. Size:252K  inchange semiconductor
 tk3a65d.pdf pdf_icon

TK3A65D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3A65DITK3A65DFEATURESLow drain-source on-resistance:RDS(ON) = 1.93 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 0.1. Size:205K  toshiba
 tk3a65da.pdf pdf_icon

TK3A65D

TK3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK3A65DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 2.3 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement mode: Vth =

 0.2. Size:252K  inchange semiconductor
 tk3a65da.pdf pdf_icon

TK3A65D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3A65DAITK3A65DAFEATURESLow drain-source on-resistance:RDS(ON) = 2.3 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

MOSTRAR MÁS

Otros transistores... TK2Q60D , TK30A06J3A , TK30A06J3 , TK30J25D , TK30S06K3L , TK35S04K3L , TK3A60DA , TK3A65DA , STF13NM60N , TK3P50D , TK40A08K3 , TK40A10J1 , TK40A10K3 , TK40F08K3 , TK40J20D , TK40J60T , TK40J60U .

History: IRF7465 | SM1A21NSK | HFU1N60SA | PSMN027-100BS | SM1A20NSFP

 

 
Back to Top

 


 
.