TK40A08K3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK40A08K3
   Código: K40A08K3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 80 nC
   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO220SIS

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TK40A08K3 Datasheet (PDF)

..1. Size:257K toshiba
tk40a08k3.pdf

TK40A08K3 NMOS (U-MOS) TK40A08K3 : mm :RDS (ON) = 7.0 m () :|Yfs| = 93 S () :IDSS = 10 A () (VDS = 75 V)

8.1. Size:233K toshiba
tk40a06n1.pdf

TK40A06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40A06N1TK40A06N1TK40A06N1TK40A06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.4 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enhan

8.2. Size:252K inchange semiconductor
tk40a06n1.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK40A06N1ITK40A06N1FEATURESLow drain-source on-resistance:RDS(ON) =10.4m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

9.1. Size:177K toshiba
tk40a10j1.pdf

TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK40A10J1 Switching Regulator Applications Unit: mm Small gate charge: Qg = 76nC (typ.) Low drain-source ON-resistance: RDS (ON) = 11.5 m (typ.) High forward transfer admittance: |Yfs| = 90 S Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement m

9.2. Size:233K toshiba
tk40a10n1.pdf

TK40A10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40A10N1TK40A10N1TK40A10N1TK40A10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enha

9.3. Size:202K toshiba
tk40a10k3.pdf

TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK40A10K3 Switching Regulator Application Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 m (typ.) High forward transfer admittance: |Yfs| = 80 S Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

9.4. Size:252K inchange semiconductor
tk40a10n1.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK40A10N1ITK40A10N1FEATURESLow drain-source on-resistance:RDS(ON) = 8.2m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

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