TK40J60U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK40J60U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 320 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 7800 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SC65 TO3P

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TK40J60U datasheet

 ..1. Size:237K  toshiba
 tk40j60u.pdf pdf_icon

TK40J60U

TK40J60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK40J60U TK40J60U TK40J60U TK40J60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.065 (typ.) (2) High forward transfer admittance Yfs = 30 S (typ.) (3) Low leakage current IDS

 ..2. Size:238K  inchange semiconductor
 tk40j60u.pdf pdf_icon

TK40J60U

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK40J60U FEATURES Low drain-source on-resistance RDS(ON) = 0.065 (typ.) Easy to control Gate switching Enhancement mode V = 3.0 to 5.0V (VDS = 10 V, ID=1mA) th Low leakage current I = 100 A (max) (V = 600 V) DSS DS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable

 7.1. Size:224K  toshiba
 tk40j60t.pdf pdf_icon

TK40J60U

TK40J60T www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T Switching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON resistance RDS (ON) = 0.068 (typ.) High forward transfer admittance Yfs = 25 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement-mode Vth = 3.0

 9.1. Size:237K  toshiba
 tk40j20d.pdf pdf_icon

TK40J60U

TK40J20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK40J20D TK40J20D TK40J20D TK40J20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.0374 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth

MOSTRAR MÁS

Otros transistores... TK3A65D, TK3P50D, TK40A08K3, TK40A10J1, TK40A10K3, TK40F08K3, TK40J20D, TK40J60T, 18N50, TK40M60U, TK40P03M1, TK40P04M1, TK40S10K3Z, TK40X10J1, TK45P03M1, TK4A50D, TK4A53D