TK40J60U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK40J60U
   Código: K40J60U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 320 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 55 nC
   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 7800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SC65 TO3P

Búsqueda de reemplazo de MOSFET TK40J60U

TK40J60U Datasheet (PDF)

..1. Size:237K toshiba
tk40j60u.pdf

TK40J60UMOSFETs Silicon N-Channel MOS (DTMOS)TK40J60UTK40J60UTK40J60UTK40J60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.065 (typ.)(2) High forward transfer admittance: |Yfs| = 30 S (typ.)(3) Low leakage current: IDS

..2. Size:238K inchange semiconductor
tk40j60u.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK40J60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.065 (typ.)Easy to control Gate switchingEnhancement mode: V = 3.0 to 5.0V (VDS = 10 V, ID=1mA)thLow leakage current: I = 100 A (max) (V = 600 V)DSS DS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable

7.1. Size:224K toshiba
tk40j60t.pdf

TK40J60T www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON resistance: RDS (ON) = 0.068 (typ.) High forward transfer admittance: Yfs = 25 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0

9.1. Size:237K toshiba
tk40j20d.pdf

TK40J20DMOSFETs Silicon N-Channel MOS (-MOS)TK40J20DTK40J20DTK40J20DTK40J20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.0374 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: