TK4A60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK4A60D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
Paquete / Cubierta: TO220SIS
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TK4A60D Datasheet (PDF)
tk4a60d.pdf

TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: Yfs = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ab
tk4a60d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4A60DITK4A60DFEATURESLow drain-source on-resistance:RDS(ON) = 1.4 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
tk4a60db.pdf

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60DB Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V) Enhancement mode: Vth
tk4a60da.pdf

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4A60DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Otros transistores... TK40X10J1 , TK45P03M1 , TK4A50D , TK4A53D , TK4A55DA , TK4A55D , TK4A60DA , TK4A60DB , NCEP15T14 , TK4A65DA , TK4P50D , TK4P55DA , TK4P55D , TK4P60DA , TK4P60DB , TK50J30D , TK50J60U .
History: BUK7S1R0-40H | IRF2804SPBF | SGSP322 | IRFH8337 | MTM68411 | 2SK3891-01R
History: BUK7S1R0-40H | IRF2804SPBF | SGSP322 | IRFH8337 | MTM68411 | 2SK3891-01R



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