TK5A65DA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK5A65DA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.67 Ohm

Encapsulados: TO220SIS

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TK5A65DA datasheet

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TK5A65DA

TK5A65DA MOSFETs Silicon N-Channel MOS ( -MOS ) TK5A65DA TK5A65DA TK5A65DA TK5A65DA 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.34 (typ.) (2) High forward transfer admittance Yfs = 3.1 S (typ.) (3) Low leakage current ID

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TK5A65DA

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A65DA ITK5A65DA FEATURES Low drain-source on-resistance RDS(ON) = 1.34 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATIN

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TK5A65DA

TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK5A65D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.6 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 8.1. Size:371K  toshiba
 tk5a65w.pdf pdf_icon

TK5A65DA

TK5A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK5A65W TK5A65W TK5A65W TK5A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement mo

MOSTRAR MÁS

Otros transistores... TK50P04M1, TK50X15J1, TK55A10J1, TK5A45DA, TK5A50D, TK5A53D, TK5A55D, TK5A60D, IRF730, TK5A65D, TK5P50D, TK5P53D, TK60A08J1, TK60J25D, TK60P03M1, TK60S06K3L, TK65L60V