TK5A65DA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK5A65DA
Código: K5A65DA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.4 VQgⓘ - Carga de la puerta: 16 nC
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.67 Ohm
Paquete / Cubierta: TO220SIS
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TK5A65DA Datasheet (PDF)
tk5a65da.pdf
TK5A65DAMOSFETs Silicon N-Channel MOS (-MOS)TK5A65DATK5A65DATK5A65DATK5A65DA1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.34 (typ.)(2) High forward transfer admittance: |Yfs| = 3.1 S (typ.)(3) Low leakage current: ID
tk5a65da.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A65DAITK5A65DAFEATURESLow drain-source on-resistance:RDS(ON) = 1.34 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATIN
tk5a65d.pdf
TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK5A65D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: Yfs = 2.6 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
tk5a65w.pdf
TK5A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK5A65WTK5A65WTK5A65WTK5A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement mo
tk5a65w.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A65WITK5A65WFEATURESLow drain-source on-resistance: RDS(ON) = 1.2 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.17mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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