TK5A65D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK5A65D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.43 Ohm

Encapsulados: TO220SIS

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TK5A65D datasheet

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TK5A65D

TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK5A65D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.6 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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TK5A65D

TK5A65DA MOSFETs Silicon N-Channel MOS ( -MOS ) TK5A65DA TK5A65DA TK5A65DA TK5A65DA 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.34 (typ.) (2) High forward transfer admittance Yfs = 3.1 S (typ.) (3) Low leakage current ID

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TK5A65D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A65DA ITK5A65DA FEATURES Low drain-source on-resistance RDS(ON) = 1.34 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATIN

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TK5A65D

TK5A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK5A65W TK5A65W TK5A65W TK5A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement mo

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