TPC6103 Todos los transistores

 

TPC6103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPC6103
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOT6 VS6
 

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TPC6103 Datasheet (PDF)

 ..1. Size:254K  toshiba
 tpc6103.pdf pdf_icon

TPC6103

TPC6103 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6103 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 29 m (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -12 V) Enhancement mode: Vth

 8.1. Size:220K  toshiba
 tpc6106.pdf pdf_icon

TPC6103

TPC6106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPC6106 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 58 m (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -40

 8.2. Size:204K  toshiba
 tpc6105.pdf pdf_icon

TPC6103

TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6105 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current : IDSS = -10 A (max) (VDS = -20 V) Enhancement mode : Vth = -0.5 to -1.2 V

 8.3. Size:192K  toshiba
 tpc6107.pdf pdf_icon

TPC6103

TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) TPC6107 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 m (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V)

MOSTRAR MÁS

Otros transistores... TK9A45D , TK9A55DA , TK9A60D , TPC6008-H , TPC6009-H , TPC6010-H , TPC6011 , TPC6012 , IRFP450 , TPC6109-H , TPC6110 , TPC6111 , TPC6113 , TPC6130 , TPC8027 , TPC8028 , TPC8029 .

 

 
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