TPC6113 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPC6113
   Código: S3N
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 117 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SOT6 VS6

Búsqueda de reemplazo de MOSFET TPC6113

TPC6113 Datasheet (PDF)

..1. Size:211K toshiba
tpc6113.pdf

TPC6113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6113 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 38 m (typ.) ( VGS = -4.5V) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth

8.1. Size:230K toshiba
tpc6110.pdf

TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6110 Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 43 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1mA) Abs

8.2. Size:201K toshiba
tpc6111.pdf

TPC6111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC6111 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 33 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.3 to -1.0 V (VDS = -10 V, ID = -1mA) Absolute Maximum Ratings (Ta = 25C)

9.1. Size:220K toshiba
tpc6106.pdf

TPC6106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPC6106 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 58 m (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -40

9.2. Size:204K toshiba
tpc6105.pdf

TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6105 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current : IDSS = -10 A (max) (VDS = -20 V) Enhancement mode : Vth = -0.5 to -1.2 V

9.3. Size:192K toshiba
tpc6107.pdf

TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) TPC6107 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 m (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V)

9.4. Size:260K toshiba
tpc6109-h.pdf

TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficiency DC-DC Converter Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 m (typ.) (VDS = -10 V) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = -1

9.5. Size:86K toshiba
tpc6108.pdf

TPC6108 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC6108 TENTATIVENotebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 50 m (typ.) DS (ON) High forward transfer admittance: |Y | = 7.4 S (typ.) fs Low leakage cur

9.6. Size:220K toshiba
tpc6130.pdf

TPC6130MOSFETs Silicon P-Channel MOS (U-MOS)TPC6130TPC6130TPC6130TPC61301. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to small and thin package(2) Low drain-source on-resistance: RDS(ON) = 86 m (typ.) (VGS = -4.

9.7. Size:192K toshiba
tpc6102.pdf

TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6102 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 48 m (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS =

9.8. Size:254K toshiba
tpc6103.pdf

TPC6103 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6103 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 29 m (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -12 V) Enhancement mode: Vth

9.9. Size:285K toshiba
tpc6104.pdf

TPC6104 PMOS (U-MOSIII) TPC6104 PC : mm : R = 33 m () DS (ON) : |Yfs| = 12 S () :

9.10. Size:165K toshiba
tpc6101.pdf

TPC6101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6101 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: R = 48 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: I = -10 A (max) (V = -20 V) DSS DS Enhancement-model: V = -0.5 to -1.2 V

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