TPC8027 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8027
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 1400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de TPC8027 MOSFET
TPC8027 Datasheet (PDF)
tpc8027.pdf

TPC8027 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8027 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.1 m (typ.) High forward transfer admittance: |Yfs| = 48 S (typ.) Low leakage curre
tpc8026.pdf

TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage curre
tpc8020-h.pdf

TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8020-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.9 nC (typ.) Low drain-source ON- resistance: RD
tpc8021-h.pdf

TPC8021-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8021-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.6 nC (typ.) Low drain-source ON-resistance: RDS
Otros transistores... TPC6011 , TPC6012 , TPC6103 , TPC6109-H , TPC6110 , TPC6111 , TPC6113 , TPC6130 , CS150N03A8 , TPC8028 , TPC8029 , TPC8041 , TPC8042 , TPC8045-H , TPC8046-H , TPC8047-H , TPC8048-H .
History: FDMS7580 | JMSL0406AGQ | 2SK1494-Z | HM2310B | BSP75G | FDMS8023S | 2SK1399
History: FDMS7580 | JMSL0406AGQ | 2SK1494-Z | HM2310B | BSP75G | FDMS8023S | 2SK1399



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