TPC8028 Todos los transistores

 ..1. Size:272K  toshiba
 tpc8028.pdf

TPC8028 N MOS (U-MOS ) TPC8028 mm PC RDS (ON) = 3.5m ( ) Yfs = 40 S (

 ..2. Size:860K  cn vbsemi
 tpc8028.pdf

TPC8028 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

 8.1. Size:185K  toshiba
 tpc8026.pdf

TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 5.1 m (typ.) High forward transfer admittance Yfs = 30 S (typ.) Low leakage curre

 8.2. Size:454K  toshiba
 tpc8020-h.pdf

TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8020-H High-Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 6.9 nC (typ.) Low drain-source ON- resistance RD

 8.3. Size:182K  toshiba
 tpc8027.pdf

TPC8027 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8027 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 2.1 m (typ.) High forward transfer admittance Yfs = 48 S (typ.) Low leakage curre

 8.4. Size:211K  toshiba
 tpc8021-h.pdf

TPC8021-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8021-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 3.6 nC (typ.) Low drain-source ON-resistance RDS

 8.5. Size:268K  toshiba
 tpc8024-h.pdf

TPC8024-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8024-H High-Efficiency DC DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 6.9 nC (typ.) Low drain-source ON-resistance R

 8.6. Size:219K  toshiba
 tpc8025.pdf

TPC8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8025 Lithium-Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 7.5 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage cur

 8.7. Size:221K  toshiba
 tpc8022-h.pdf

TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS III) TPC8022-H High-Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable-Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge QSW = 3.5 nC (typ.) Low drain-so

 8.8. Size:183K  toshiba
 tpc8029.pdf

TPC8029 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8029 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 2.9 m (typ.) High forward transfer admittance Yfs = 40 S (typ.) Low leakage curre