TPC8056-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8056-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.1 nS
Cossⓘ - Capacitancia de salida: 1000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de TPC8056-H MOSFET
TPC8056-H Datasheet (PDF)
tpc8056-h.pdf

TPC8056-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8056-HTPC8056-HTPC8056-HTPC8056-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
tpc8053-h.pdf

TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8053-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.1 m (typ.)
tpc8059-h.pdf

TPC8059-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8059-HTPC8059-HTPC8059-HTPC8059-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
tpc8050-h.pdf

TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m (typ.)
Otros transistores... TPC8047-H , TPC8048-H , TPC8049-H , TPC8050-H , TPC8051-H , TPC8052-H , TPC8053-H , TPC8055-H , AON6380 , TPC8057-H , TPC8058-H , TPC8059-H , TPC8061-H , TPC8062-H , TPC8063-H , TPC8064-H , TPC8065-H .
History: IRFS23N15DPBF | SVF10N60CAFJ | WMM95P06TS | SSF50R140SFD | STP33N60DM2 | HUFA76429D3ST-F085 | HSL6008
History: IRFS23N15DPBF | SVF10N60CAFJ | WMM95P06TS | SSF50R140SFD | STP33N60DM2 | HUFA76429D3ST-F085 | HSL6008



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