TPC8056-H Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8056-H 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.1 nS
Cossⓘ - Capacitancia de salida: 1000 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
Encapsulados: SOP8
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TPC8056-H datasheet
tpc8056-h.pdf
TPC8056-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8056-H TPC8056-H TPC8056-H TPC8056-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change
tpc8053-h.pdf
TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8053-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 6.7 nC (typ.) Low drain-source ON-resistance RDS (ON) = 14.1 m (typ.)
tpc8059-h.pdf
TPC8059-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8059-H TPC8059-H TPC8059-H TPC8059-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change
tpc8050-h.pdf
TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 9.2 nC (typ.) Low drain-source ON-resistance RDS (ON) = 9.3 m (typ.)
Otros transistores... TPC8047-H, TPC8048-H, TPC8049-H, TPC8050-H, TPC8051-H, TPC8052-H, TPC8053-H, TPC8055-H, IRF530, TPC8057-H, TPC8058-H, TPC8059-H, TPC8061-H, TPC8062-H, TPC8063-H, TPC8064-H, TPC8065-H
Parámetros del MOSFET. Cómo se afectan entre sí.
History: SI7946ADP | UTT60P03
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