TPC8064-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPC8064-H
   Código: TPC8064H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 2.4 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET TPC8064-H

TPC8064-H Datasheet (PDF)

..1. Size:229K toshiba
tpc8064-h.pdf

TPC8064-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8064-HTPC8064-HTPC8064-HTPC8064-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 5.0 nC (typ.)(4) Lo

8.1. Size:247K toshiba
tpc8066-h.pdf

TPC8066-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8066-HTPC8066-HTPC8066-HTPC8066-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.2 nC (typ.)(4) Lo

8.2. Size:250K toshiba
tpc8067-h.pdf

TPC8067-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8067-HTPC8067-HTPC8067-HTPC8067-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 1.9 nC (typ.)(4) Lo

8.3. Size:222K toshiba
tpc8063-h.pdf

TPC8063-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8063-HTPC8063-HTPC8063-HTPC8063-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:

8.4. Size:257K toshiba
tpc8065-h.pdf

TPC8065-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8065-HTPC8065-HTPC8065-HTPC8065-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 4.3 nC (typ.)(4) Lo

8.5. Size:218K toshiba
tpc8060-h.pdf

TPC8060-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8060-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 16 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.1 m

8.6. Size:216K toshiba
tpc8061-h.pdf

TPC8061-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8061-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 21 m

8.7. Size:223K toshiba
tpc8062-h.pdf

TPC8062-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8062-HTPC8062-HTPC8062-HTPC8062-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:

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