TPC8074 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8074
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.1 nS
Cossⓘ - Capacitancia de salida: 330 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de TPC8074 MOSFET
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TPC8074 datasheet
tpc8074.pdf
TPC8074 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8074 TPC8074 TPC8074 TPC8074 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 5.1 m
tpc8078.pdf
TPC8078 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8078 TPC8078 TPC8078 TPC8078 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 1.9 m (typ
tpc8075.pdf
TPC8075 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8075 TPC8075 TPC8075 TPC8075 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.1 m (typ
tpc8076.pdf
TPC8076 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8076 TPC8076 TPC8076 TPC8076 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.9 m (typ
Otros transistores... TPC8061-H, TPC8062-H, TPC8063-H, TPC8064-H, TPC8065-H, TPC8066-H, TPC8067-H, TPC8073, IRF830, TPC8075, TPC8076, TPC8078, TPC8080, TPC8081, TPC8082, TPC8084, TPC8085
History: BUK7S0R7-40H | FDBL86366-F085
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