TPC8074 Todos los transistores

 

TPC8074 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPC8074
   Código: TPC8074
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 3.1 nS
   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET TPC8074

 

TPC8074 Datasheet (PDF)

 ..1. Size:223K  toshiba
tpc8074.pdf

TPC8074
TPC8074

TPC8074MOSFETs Silicon N-Channel MOS (U-MOS)TPC8074TPC8074TPC8074TPC80741. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.1 m

 8.1. Size:235K  toshiba
tpc8078.pdf

TPC8074
TPC8074

TPC8078MOSFETs Silicon N-Channel MOS (U-MOS)TPC8078TPC8078TPC8078TPC80781. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ

 8.2. Size:234K  toshiba
tpc8075.pdf

TPC8074
TPC8074

TPC8075MOSFETs Silicon N-Channel MOS (U-MOS)TPC8075TPC8075TPC8075TPC80751. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.1 m (typ

 8.3. Size:235K  toshiba
tpc8076.pdf

TPC8074
TPC8074

TPC8076MOSFETs Silicon N-Channel MOS (U-MOS)TPC8076TPC8076TPC8076TPC80761. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.9 m (typ

 8.4. Size:227K  toshiba
tpc8073.pdf

TPC8074
TPC8074

TPC8073MOSFETs Silicon N-Channel MOS (U-MOS)TPC8073TPC8073TPC8073TPC80731. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.8 m

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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