TPC8078 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8078
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 33 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 1200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de TPC8078 MOSFET
TPC8078 Datasheet (PDF)
tpc8078.pdf

TPC8078MOSFETs Silicon N-Channel MOS (U-MOS)TPC8078TPC8078TPC8078TPC80781. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ
tpc8074.pdf

TPC8074MOSFETs Silicon N-Channel MOS (U-MOS)TPC8074TPC8074TPC8074TPC80741. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.1 m
tpc8075.pdf

TPC8075MOSFETs Silicon N-Channel MOS (U-MOS)TPC8075TPC8075TPC8075TPC80751. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.1 m (typ
tpc8076.pdf

TPC8076MOSFETs Silicon N-Channel MOS (U-MOS)TPC8076TPC8076TPC8076TPC80761. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.9 m (typ
Otros transistores... TPC8064-H , TPC8065-H , TPC8066-H , TPC8067-H , TPC8073 , TPC8074 , TPC8075 , TPC8076 , 8N60 , TPC8080 , TPC8081 , TPC8082 , TPC8084 , TPC8085 , TPC8086 , TPC8087 , TPC8088 .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
75339p mosfet | a968 transistor | f1010e mosfet | 2sc3883 | c3306 datasheet | hy3810 | c711 transistor | k3599 transistor datasheet