TPC8081 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8081
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.4 nS
Cossⓘ - Capacitancia de salida: 680 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de TPC8081 MOSFET
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TPC8081 datasheet
tpc8081.pdf
TPC8081 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8081 TPC8081 TPC8081 TPC8081 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.5 m (typ.) (VGS = 10 V) (3) Low leakage curren
tpc8084.pdf
TPC8084 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8084 TPC8084 TPC8084 TPC8084 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 5.4 m (typ
tpc8087.pdf
TPC8087 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8087 TPC8087 TPC8087 TPC8087 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 1.7 m (typ.) (VGS = 10 V) (3) Low leakage curren
tpc8085.pdf
TPC8085 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8085 TPC8085 TPC8085 TPC8085 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.8 m
Otros transistores... TPC8066-H, TPC8067-H, TPC8073, TPC8074, TPC8075, TPC8076, TPC8078, TPC8080, K2611, TPC8082, TPC8084, TPC8085, TPC8086, TPC8087, TPC8088, TPC8092, TPC8120
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