TPC8087 Todos los transistores

 

TPC8087 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPC8087
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 91 nC
   trⓘ - Tiempo de subida: 4.9 nS
   Cossⓘ - Capacitancia de salida: 1200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

TPC8087 Datasheet (PDF)

 ..1. Size:220K  toshiba
 tpc8087.pdf pdf_icon

TPC8087

TPC8087MOSFETs Silicon N-Channel MOS (U-MOS)TPC8087TPC8087TPC8087TPC80871. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.7 m (typ.) (VGS = 10 V)(3) Low leakage curren

 8.1. Size:238K  toshiba
 tpc8084.pdf pdf_icon

TPC8087

TPC8084MOSFETs Silicon N-Channel MOS (U-MOS)TPC8084TPC8084TPC8084TPC80841. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.4 m (typ

 8.2. Size:222K  toshiba
 tpc8081.pdf pdf_icon

TPC8087

TPC8081MOSFETs Silicon N-Channel MOS (U-MOS)TPC8081TPC8081TPC8081TPC80811. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.5 m (typ.) (VGS = 10 V)(3) Low leakage curren

 8.3. Size:221K  toshiba
 tpc8085.pdf pdf_icon

TPC8087

TPC8085MOSFETs Silicon N-Channel MOS (U-MOS)TPC8085TPC8085TPC8085TPC80851. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.8 m

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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