TPC8124 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8124
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 9 nS
Cossⓘ - Capacitancia de salida: 620 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de TPC8124 MOSFET
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TPC8124 datasheet
..1. Size:257K toshiba
tpc8124.pdf 
TPC8124 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8124 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 6.1 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -40 V) Enhancement mode Vth = -0.8 to -2.0 V
8.1. Size:215K toshiba
tpc8127.pdf
TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 5 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V (
8.2. Size:276K toshiba
tpc8122.pdf
TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8122 Lithium Ion Battery Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 6.3 m (typ.) High forward transfer admittance Yfs = 30S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V
8.3. Size:299K toshiba
tpc8126.pdf
TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.5 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V
8.4. Size:272K toshiba
tpc8123.pdf
TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.0 m (typ.) High forward transfer admittance Yfs = 36 S (typ.) Low leakage current IDSS = -10 A (max
8.5. Size:289K toshiba
tpc8120.pdf
TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 2.6 m (typ.) High forward transfer admittance Yfs =80 S (typ.) Low leakage current IDSS = -10 A (max)
8.6. Size:260K toshiba
tpc8129.pdf
TPC8129 MOSFETs Silicon P-Channel MOS (U-MOS ) TPC8129 TPC8129 TPC8129 TPC8129 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 17 m (typ.) (VGS = -
8.7. Size:221K toshiba
tpc8125.pdf
TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 10 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V
8.8. Size:216K toshiba
tpc8128.pdf
TPC8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8128 Lithium Ion Battery Applications Unit mm Power Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 3.9 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V
8.10. Size:818K cn vbsemi
tpc8127.pdf
TPC8127 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G
8.11. Size:818K cn vbsemi
tpc8123.pdf
TPC8123 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G
8.12. Size:874K cn vbsemi
tpc8129.pdf
TPC8129 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D G
8.13. Size:818K cn vbsemi
tpc8121.pdf
TPC8121 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G
Otros transistores... TPC8084, TPC8085, TPC8086, TPC8087, TPC8088, TPC8092, TPC8120, TPC8123, IRFZ44N, TPC8125, TPC8126, TPC8127, TPC8128, TPC8129, TPC8132, TPC8133, TPC8134
