TPC8129 Todos los transistores

 ..1. Size:260K  toshiba
 tpc8129.pdf

TPC8129 MOSFETs Silicon P-Channel MOS (U-MOS ) TPC8129 TPC8129 TPC8129 TPC8129 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 17 m (typ.) (VGS = -

 ..2. Size:874K  cn vbsemi
 tpc8129.pdf

TPC8129 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D G

 8.1. Size:215K  toshiba
 tpc8127.pdf

TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 5 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V (

 8.2. Size:276K  toshiba
 tpc8122.pdf

TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8122 Lithium Ion Battery Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 6.3 m (typ.) High forward transfer admittance Yfs = 30S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V

 8.3. Size:299K  toshiba
 tpc8126.pdf

TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.5 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V

 8.4. Size:272K  toshiba
 tpc8123.pdf

TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.0 m (typ.) High forward transfer admittance Yfs = 36 S (typ.) Low leakage current IDSS = -10 A (max

 8.5. Size:289K  toshiba
 tpc8120.pdf

TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 2.6 m (typ.) High forward transfer admittance Yfs =80 S (typ.) Low leakage current IDSS = -10 A (max)

 8.6. Size:221K  toshiba
 tpc8125.pdf

TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 10 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V

 8.7. Size:257K  toshiba
 tpc8124.pdf

TPC8124 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8124 Lithium Ion Battery Applications Power Management Switch Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 6.1 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -40 V) Enhancement mode Vth = -0.8 to -2.0 V

 8.8. Size:216K  toshiba
 tpc8128.pdf

TPC8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8128 Lithium Ion Battery Applications Unit mm Power Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 3.9 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V

 8.9. Size:326K  toshiba
 tpc8121.pdf

 8.10. Size:818K  cn vbsemi
 tpc8127.pdf

TPC8127 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G

 8.11. Size:818K  cn vbsemi
 tpc8123.pdf

TPC8123 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G

 8.12. Size:818K  cn vbsemi
 tpc8121.pdf

TPC8121 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G