TPC8223-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8223-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.1 nS
Cossⓘ - Capacitancia de salida: 210 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de TPC8223-H MOSFET
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TPC8223-H datasheet
tpc8223-h.pdf
TPC8223-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8223-H TPC8223-H TPC8223-H TPC8223-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate change QSW = 3.6 nC (typ.) (4) Lo
tpc8223-h.pdf
TPC8223-H www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.010 at VGS = 10 V 12 30 5.9 nC Optimized for High-Side Synchronous 0.012 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch
tpc8224-h.pdf
TPC8224-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8224-H TPC8224-H TPC8224-H TPC8224-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate change QSW = 1.9 nC (typ.) (4) Lo
tpc8227-h.pdf
TPC8227-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8227-H TPC8227-H TPC8227-H TPC8227-H 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters CCFL Inverters 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 2.4 nC (typ.) (4) Low drain-source on-resistance RDS(O
Otros transistores... TPC8126, TPC8127, TPC8128, TPC8129, TPC8132, TPC8133, TPC8134, TPC8221-H, IRF640, TPC8224-H, TPC8407, TPC8408, TPC8A03-H, TPC8A04-H, TPC8A05-H, TPC8A06-H, TPCA8006-H
History: IPS110N12N3G | IPS50R520CP
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