TPC8223-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPC8223-H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 8.3 nC
   trⓘ - Tiempo de subida: 2.1 nS
   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET TPC8223-H

TPC8223-H Datasheet (PDF)

..1. Size:255K toshiba
tpc8223-h.pdf

TPC8223-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8223-HTPC8223-HTPC8223-HTPC8223-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 3.6 nC (typ.)(4) Lo

..2. Size:872K cn vbsemi
tpc8223-h.pdf

TPC8223-Hwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1230 5.9 nC Optimized for High-Side Synchronous0.012 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

8.1. Size:259K toshiba
tpc8224-h.pdf

TPC8224-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8224-HTPC8224-HTPC8224-HTPC8224-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 1.9 nC (typ.)(4) Lo

8.2. Size:257K toshiba
tpc8227-h.pdf

TPC8227-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8227-HTPC8227-HTPC8227-HTPC8227-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 2.4 nC (typ.)(4) Low drain-source on-resistance: RDS(O

8.3. Size:388K toshiba
tpc8221-h.pdf

TPC8221-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8221-HTPC8221-HTPC8221-HTPC8221-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 3.5 nC (typ.)(4) Lo

8.4. Size:254K toshiba
tpc8228-h.pdf

TPC8228-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8228-HTPC8228-HTPC8228-HTPC8228-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 2.6 nC (typ.)(4) Low drain-source on-resistance: RDS(O

8.5. Size:256K toshiba
tpc8229-h.pdf

TPC8229-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8229-HTPC8229-HTPC8229-HTPC8229-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 53 m (typ.)(4)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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