TPCA8024 Todos los transistores

 

TPCA8024 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCA8024
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
   Paquete / Cubierta: SOP-ADVANCE
     - Selección de transistores por parámetros

 

TPCA8024 Datasheet (PDF)

 ..1. Size:210K  toshiba
tpca8024.pdf pdf_icon

TPCA8024

TPCA8024 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCA8024 Lithium-Ion Battery Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 Portable Equipment Applications 8 0.05 M A 5 0.15 0.05 Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 3.5 m (typ.) 4 High forward transfer

 7.1. Size:270K  toshiba
tpca8020-h.pdf pdf_icon

TPCA8024

TPCA8020-H NMOS (U-MOSIII) TPCA8020-H DCDC : mm PC 0.40.11.270.50.10.05 M A8 5 CCFL 0.150.05 41 0.595

 7.2. Size:216K  toshiba
tpca8027-h.pdf pdf_icon

TPCA8024

TPCA8027-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS) TPCA8027-H Switching Regulator Applications Motor Drive Applications Unit: mm0.40.11.270.50.10.05 M A Small footprint due to a small and thin package 8 5 High-speed switching Small gate charge: QSW = 8.1 nC (typ.) 0.150.05 Low drain-source ON-resist

 7.3. Size:194K  toshiba
tpca8028-h.pdf pdf_icon

TPCA8024

TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8028-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications Small footprint due to a small and thin package 0.150.05 High-speed switching Small gate charge: QSW = 20 nC (typ.)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 4N80AF | IRFSL4321 | APQ50SN06A | NTZS3151PT1G | SST70R380S2 | AP4506GEM | SQJ970EP

 

 
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