BUK465-100A Todos los transistores

 

BUK465-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK465-100A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SOT404
     - Selección de transistores por parámetros

 

BUK465-100A Datasheet (PDF)

 ..1. Size:57K  philips
buk465-100a 1.pdf pdf_icon

BUK465-100A

Philips Semiconductors Product specification PowerMOS transistor BUK465-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 100 Vapplications. ID Drain current (DC) 26 AThe device is intended for use in Ptot Total power dissipation 125

 7.1. Size:57K  philips
buk465-200a 1.pdf pdf_icon

BUK465-100A

Philips Semiconductors Product specification PowerMOS transistor BUK465-200AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage 200 Vapplications. ID Drain current (DC) 14 AThe device is intended for use in Ptot Total power dissipation 125

 7.2. Size:59K  philips
buk465-60a 1.pdf pdf_icon

BUK465-100A

Philips Semiconductors Product specification PowerMOS transistor BUK465-60AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for surface mount VDS Drain-source voltage -60Aapplications. ID Drain current (DC) 60 VThe device is intended for use in Ptot Total power dissipation 41 A

 7.3. Size:74K  philips
buk465-60h 1.pdf pdf_icon

BUK465-100A

Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 43 AThe device is intended for use in Ptot Total power dissipation 125

Otros transistores... BUK456-1000B , BUK456-100A , BUK456-200A , BUK456-200B , BUK456-800A , BUK456-800B , BUK462-100A , BUK463-100A , IRFB4115 , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , BUK545-100B .

History: STD5N52K3 | SVS11N65FD2 | CSD19536KCS | ASDM3400 | KF5N53D | PE506BA

 

 
Back to Top

 


 
.