BUK465-100A Todos los transistores

 

BUK465-100A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK465-100A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SOT404

 Búsqueda de reemplazo de BUK465-100A MOSFET

- Selecciónⓘ de transistores por parámetros

 

BUK465-100A datasheet

 ..1. Size:57K  philips
buk465-100a 1.pdf pdf_icon

BUK465-100A

Philips Semiconductors Product specification PowerMOS transistor BUK465-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 26 A The device is intended for use in Ptot Total power dissipation 125

 7.1. Size:57K  philips
buk465-200a 1.pdf pdf_icon

BUK465-100A

Philips Semiconductors Product specification PowerMOS transistor BUK465-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 200 V applications. ID Drain current (DC) 14 A The device is intended for use in Ptot Total power dissipation 125

 7.2. Size:59K  philips
buk465-60a 1.pdf pdf_icon

BUK465-100A

Philips Semiconductors Product specification PowerMOS transistor BUK465-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage -60A applications. ID Drain current (DC) 60 V The device is intended for use in Ptot Total power dissipation 41 A

 7.3. Size:74K  philips
buk465-60h 1.pdf pdf_icon

BUK465-100A

Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 43 A The device is intended for use in Ptot Total power dissipation 125

Otros transistores... BUK456-1000B , BUK456-100A , BUK456-200A , BUK456-200B , BUK456-800A , BUK456-800B , BUK462-100A , BUK463-100A , P55NF06 , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , BUK545-100B .

History: BUK455-100A | BUK563-100A | BUK453-100A

 

 

 


History: BUK455-100A | BUK563-100A | BUK453-100A

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AS6004 | 2N7002EY | AS2310A | 2N7002KM | 2N7002KH | AON5802 | AOSS62934 | AOSN21319C | AONS66966 | AONR62992 | AON7400B | AON6578 | AO3480C | AO3400C | HAF1008S | HAF1008L

 

 

 

Popular searches

2sc711 datasheet | bu4508dx | 2sc1364 | 2sc2320 | d669a transistor | 2sc1419 | 2sc1124 | 2n408

 


 
↑ Back to Top
.