TPCA8049-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCA8049-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.9 nS
Cossⓘ - Capacitancia de salida: 420 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0104 Ohm
Paquete / Cubierta: SOP-ADVANCE
- Selección de transistores por parámetros
TPCA8049-H Datasheet (PDF)
tpca8049-h.pdf

TPCA8049-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8049-H Switching Regulator Applications Unit: mmMotor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 13 nC (typ.) 1A
tpca8047-h.pdf

TPCA8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8047-H Switching Regulator Applications Unit: mmMotor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 13 nC (typ.) 1A
tpca8042.pdf

TPCA8042 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCA8042 Lithium-Ion Battery Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.6 m (typ.) 40.595 1 High forwa
tpca8040-h.pdf

TPCA8040-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8040-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 5.7 nC
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SI1062X | AOLF66610 | VS3618AE | 2SK1336 | WSD4066DN | CSD17310Q5A | RU3520H
History: SI1062X | AOLF66610 | VS3618AE | 2SK1336 | WSD4066DN | CSD17310Q5A | RU3520H



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