TPCA8080 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCA8080
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 57 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.3 nS
Cossⓘ - Capacitancia de salida: 810 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Paquete / Cubierta: SOP-ADVANCE
Búsqueda de reemplazo de TPCA8080 MOSFET
TPCA8080 Datasheet (PDF)
tpca8080.pdf

TPCA8080MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8080TPCA8080TPCA8080TPCA80801. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.0 m (typ.) (VGS = 10 V)(3) Low leakage c
tpca8083.pdf

TPCA8083MOSFETs Silicon N-channel MOS (U-MOS)TPCA8083TPCA8083TPCA8083TPCA80831. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =
tpca8087.pdf

TPCA8087MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8087TPCA8087TPCA8087TPCA80871. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.5 m (typ.) (VGS = 10 V)(3) Low leakage c
tpca8086.pdf

TPCA8086MOSFETs Silicon N-channel MOS (U-MOS)TPCA8086TPCA8086TPCA8086TPCA80861. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 9.0 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =
Otros transistores... TPCA8059-H , TPCA8062-H , TPCA8063-H , TPCA8064-H , TPCA8065-H , TPCA8068-H , TPCA8075 , TPCA8078 , IRF530 , TPCA8081 , TPCA8082 , TPCA8087 , TPCA8088 , TPCA8104 , TPCA8105 , TPCA8107-H , TPCA8108 .
History: SM4301PSU | IRFB4610



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
kn2907a | ncep028n85 datasheet | sw50n06 | 2sa1232 | 2sc1940 | ftp08n06a | 2n3405 | 2n3567