TPCA8087 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPCA8087
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 70 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 56 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
   Carga de la puerta (Qg): 91 nC
   Tiempo de subida (tr): 5.7 nS
   Conductancia de drenaje-sustrato (Cd): 1200 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0019 Ohm
   Paquete / Cubierta: SOP-ADVANCE

Búsqueda de reemplazo de MOSFET TPCA8087

TPCA8087 Datasheet (PDF)

..1. Size:257K toshiba
tpca8087.pdf

TPCA8087MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8087TPCA8087TPCA8087TPCA80871. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.5 m (typ.) (VGS = 10 V)(3) Low leakage c

7.1. Size:233K toshiba
tpca8083.pdf

TPCA8083MOSFETs Silicon N-channel MOS (U-MOS)TPCA8083TPCA8083TPCA8083TPCA80831. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =

7.2. Size:235K toshiba
tpca8086.pdf

TPCA8086MOSFETs Silicon N-channel MOS (U-MOS)TPCA8086TPCA8086TPCA8086TPCA80861. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 9.0 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =

7.3. Size:259K toshiba
tpca8080.pdf

TPCA8080MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8080TPCA8080TPCA8080TPCA80801. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.0 m (typ.) (VGS = 10 V)(3) Low leakage c

7.4. Size:234K toshiba
tpca8085.pdf

TPCA8085MOSFETs Silicon N-channel MOS (U-MOS)TPCA8085TPCA8085TPCA8085TPCA80851. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 4.6 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =

7.5. Size:234K toshiba
tpca8084.pdf

TPCA8084MOSFETs Silicon N-channel MOS (U-MOS)TPCA8084TPCA8084TPCA8084TPCA80841. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 4.2 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =

7.6. Size:233K toshiba
tpca8081.pdf

TPCA8081MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8081TPCA8081TPCA8081TPCA80811. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.3 m (typ.) (VGS = 10 V)(3) Low leakage c

7.7. Size:229K toshiba
tpca8082.pdf

TPCA8082MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8082TPCA8082TPCA8082TPCA80821. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 2.9 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS = 10 A (max)

7.8. Size:228K toshiba
tpca8088.pdf

TPCA8088MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8088TPCA8088TPCA8088TPCA80881. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.7 m (typ.) (VGS = 10 V)(3) Low leakage c

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